Methods and apparatus for complete ellipsometry (review)
To monitor the structure of near-surface layers of ordered crystalline structures and their impurity composition, optical methods turn out to be useful. In this paper, the authors analyze complete ellipsometry, a method enabling the determination of the complete Stokes vector of the reflected light...
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| Veröffentlicht in: | J. Appl. Spectrosc. (Engl. Transl.); (United States) 1986-06, Vol.44 (6), p.559-578 |
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| container_end_page | 578 |
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| container_title | J. Appl. Spectrosc. (Engl. Transl.); (United States) |
| container_volume | 44 |
| creator | Aleksandrov, M. L. Asinovskii, L. M. Mel'tsin, A. L. Tolokonnikov, V. A. |
| description | To monitor the structure of near-surface layers of ordered crystalline structures and their impurity composition, optical methods turn out to be useful. In this paper, the authors analyze complete ellipsometry, a method enabling the determination of the complete Stokes vector of the reflected light or all elements of the Muller matrix of the surface under study. It is significant that this measurement method is contact-free and non-destructive (unlike ionic and electronic methods) and can be employed in a wide range of temperatures in a vacuum and in corrosive media. In addition, the determining role of the surface layer of the object under study in the formation of the reflected wave and the concomitant high sensitivity of its polarization to structural changes in this layer make ellipsometry one of the basic methods for studying thin - from 0.1 to 20 nm - surface films and boundaries between media. |
| doi_str_mv | 10.1007/BF00659250 |
| format | Article |
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A.</creatorcontrib><title>Methods and apparatus for complete ellipsometry (review)</title><title>J. Appl. Spectrosc. (Engl. Transl.); (United States)</title><description>To monitor the structure of near-surface layers of ordered crystalline structures and their impurity composition, optical methods turn out to be useful. In this paper, the authors analyze complete ellipsometry, a method enabling the determination of the complete Stokes vector of the reflected light or all elements of the Muller matrix of the surface under study. It is significant that this measurement method is contact-free and non-destructive (unlike ionic and electronic methods) and can be employed in a wide range of temperatures in a vacuum and in corrosive media. 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A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c171t-b514056b62adf5bc7f77d2c1f12a2a96b20a3b780197f0333eb5657cc086f8833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>440300 - Miscellaneous Instruments- (-1989)</topic><topic>BEAM OPTICS</topic><topic>BEAM SPLITTING</topic><topic>BIOCHEMISTRY</topic><topic>CHEMISTRY</topic><topic>COATINGS</topic><topic>COMPUTER CALCULATIONS</topic><topic>CRYSTAL STRUCTURE</topic><topic>CRYSTALS</topic><topic>DOCUMENT TYPES</topic><topic>ELECTROCHEMISTRY</topic><topic>ELECTROMAGNETIC RADIATION</topic><topic>ELECTRONIC EQUIPMENT</topic><topic>ELLIPSOMETERS</topic><topic>ELLIPSOMETRY</topic><topic>FOURIER TRANSFORMATION</topic><topic>GAS LASERS</topic><topic>HELIUM-NEON LASERS</topic><topic>IMAGE PROCESSING</topic><topic>IMPURITIES</topic><topic>INCIDENCE ANGLE</topic><topic>INTEGRAL TRANSFORMATIONS</topic><topic>LASER RADIATION</topic><topic>LASERS</topic><topic>MATERIALS</topic><topic>MATERIALS TESTING</topic><topic>MATRICES</topic><topic>MEASURING INSTRUMENTS</topic><topic>MEASURING METHODS</topic><topic>MODULATION</topic><topic>MONOCHROMATIC RADIATION</topic><topic>MULTI-CHANNEL ANALYZERS</topic><topic>NONDESTRUCTIVE TESTING</topic><topic>OPTICAL PROPERTIES</topic><topic>OPTIMIZATION</topic><topic>OTHER INSTRUMENTATION</topic><topic>PHASE SHIFT</topic><topic>PHOTODETECTORS</topic><topic>PHYSICAL PROPERTIES</topic><topic>POLARIMETERS</topic><topic>POLARIZATION</topic><topic>PROCESSING</topic><topic>PROTECTIVE COATINGS</topic><topic>PULSE ANALYZERS</topic><topic>RADIATIONS</topic><topic>REFLECTION</topic><topic>REFRACTION</topic><topic>REVIEWS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SENSITIVITY</topic><topic>STOKES PARAMETERS</topic><topic>TESTING</topic><topic>THIN FILMS</topic><topic>TRANSFORMATIONS</topic><topic>USES</topic><topic>VISIBLE RADIATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aleksandrov, M. L.</creatorcontrib><creatorcontrib>Asinovskii, L. M.</creatorcontrib><creatorcontrib>Mel'tsin, A. L.</creatorcontrib><creatorcontrib>Tolokonnikov, V. A.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Spectrosc. (Engl. Transl.); (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aleksandrov, M. L.</au><au>Asinovskii, L. M.</au><au>Mel'tsin, A. L.</au><au>Tolokonnikov, V. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Methods and apparatus for complete ellipsometry (review)</atitle><jtitle>J. Appl. Spectrosc. (Engl. Transl.); (United States)</jtitle><date>1986-06</date><risdate>1986</risdate><volume>44</volume><issue>6</issue><spage>559</spage><epage>578</epage><pages>559-578</pages><issn>0021-9037</issn><eissn>1573-8647</eissn><abstract>To monitor the structure of near-surface layers of ordered crystalline structures and their impurity composition, optical methods turn out to be useful. In this paper, the authors analyze complete ellipsometry, a method enabling the determination of the complete Stokes vector of the reflected light or all elements of the Muller matrix of the surface under study. It is significant that this measurement method is contact-free and non-destructive (unlike ionic and electronic methods) and can be employed in a wide range of temperatures in a vacuum and in corrosive media. In addition, the determining role of the surface layer of the object under study in the formation of the reflected wave and the concomitant high sensitivity of its polarization to structural changes in this layer make ellipsometry one of the basic methods for studying thin - from 0.1 to 20 nm - surface films and boundaries between media.</abstract><cop>United States</cop><doi>10.1007/BF00659250</doi><tpages>20</tpages></addata></record> |
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| ispartof | J. Appl. Spectrosc. (Engl. Transl.); (United States), 1986-06, Vol.44 (6), p.559-578 |
| issn | 0021-9037 1573-8647 |
| language | eng |
| recordid | cdi_crossref_primary_10_1007_BF00659250 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | 440300 - Miscellaneous Instruments- (-1989) BEAM OPTICS BEAM SPLITTING BIOCHEMISTRY CHEMISTRY COATINGS COMPUTER CALCULATIONS CRYSTAL STRUCTURE CRYSTALS DOCUMENT TYPES ELECTROCHEMISTRY ELECTROMAGNETIC RADIATION ELECTRONIC EQUIPMENT ELLIPSOMETERS ELLIPSOMETRY FOURIER TRANSFORMATION GAS LASERS HELIUM-NEON LASERS IMAGE PROCESSING IMPURITIES INCIDENCE ANGLE INTEGRAL TRANSFORMATIONS LASER RADIATION LASERS MATERIALS MATERIALS TESTING MATRICES MEASURING INSTRUMENTS MEASURING METHODS MODULATION MONOCHROMATIC RADIATION MULTI-CHANNEL ANALYZERS NONDESTRUCTIVE TESTING OPTICAL PROPERTIES OPTIMIZATION OTHER INSTRUMENTATION PHASE SHIFT PHOTODETECTORS PHYSICAL PROPERTIES POLARIMETERS POLARIZATION PROCESSING PROTECTIVE COATINGS PULSE ANALYZERS RADIATIONS REFLECTION REFRACTION REVIEWS SEMICONDUCTOR MATERIALS SENSITIVITY STOKES PARAMETERS TESTING THIN FILMS TRANSFORMATIONS USES VISIBLE RADIATION |
| title | Methods and apparatus for complete ellipsometry (review) |
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