Electrical conduction in Cu/Mn multilayer films
Metallic superlattices of Cu and Mn have been synthesized on glass and mica substrates by a sequential evaporation technique. The electrical resistivity and the temperature coefficient of resistance (TCR) of layered Cu/Mn has been studied for various thicknesses (d) in the range 2-6 nm by varying th...
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Veröffentlicht in: | Applied Physics A Solids and Surfaces 1989-09, Vol.49 (3), p.273-277 |
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creator | Angadi, M. A. Nallamshetty, K. |
description | Metallic superlattices of Cu and Mn have been synthesized on glass and mica substrates by a sequential evaporation technique. The electrical resistivity and the temperature coefficient of resistance (TCR) of layered Cu/Mn has been studied for various thicknesses (d) in the range 2-6 nm by varying the number of double layers (n) from 5-35. The transition from a negative to positive TCR has been observed for d > 5 nm. The thickness dependence of room temperature resistivity ( rho sub RT ) and TCR shows oscillatory behaviour. Graphs. 21 ref.--AA |
doi_str_mv | 10.1007/BF00616854 |
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title | Electrical conduction in Cu/Mn multilayer films |
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