Instabilities in quantum point contact structures
We discuss the appearance of strong nonlinearities including S-type negative differential conductance in the I– Vcharacteristics of quantum point contact (QPC) structures. Time-dependent measurements demonstrate that the highly nonlinear d.c. I– Vfeatures are associated with a temporal average of ra...
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| Veröffentlicht in: | Superlattices and microstructures 1996-01, Vol.20 (4), p.419-425 |
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| container_end_page | 425 |
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| container_issue | 4 |
| container_start_page | 419 |
| container_title | Superlattices and microstructures |
| container_volume | 20 |
| creator | Wybourne, M.N. Smith, Jolinda C. Berven, C. Ramasubramaniam, R. Goodnick, S.M. |
| description | We discuss the appearance of strong nonlinearities including S-type negative differential conductance in the
I–
Vcharacteristics of quantum point contact (QPC) structures. Time-dependent measurements demonstrate that the highly nonlinear d.c.
I–
Vfeatures are associated with a temporal average of random telegraph switching (RTS) between different current levels. The RTS is only observed when the voltage across the device is such that the chemical potential on one side of the QPC is aligned with the bottom of a one-dimensional subband in the QPC. As the chemical potential is moved further into the subband, the switching behavior disappears until the next subband minimum is reached. |
| doi_str_mv | 10.1006/spmi.1996.0098 |
| format | Article |
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I–
Vcharacteristics of quantum point contact (QPC) structures. Time-dependent measurements demonstrate that the highly nonlinear d.c.
I–
Vfeatures are associated with a temporal average of random telegraph switching (RTS) between different current levels. The RTS is only observed when the voltage across the device is such that the chemical potential on one side of the QPC is aligned with the bottom of a one-dimensional subband in the QPC. As the chemical potential is moved further into the subband, the switching behavior disappears until the next subband minimum is reached.</description><identifier>ISSN: 0749-6036</identifier><identifier>EISSN: 1096-3677</identifier><identifier>DOI: 10.1006/spmi.1996.0098</identifier><identifier>CODEN: SUMIEK</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Miscellaneous ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Superlattices and microstructures, 1996-01, Vol.20 (4), p.419-425</ispartof><rights>1996 Academic Press</rights><rights>1997 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c315t-97cd622d0217ae12d1b9279376191a7c54f9074c4f5e05d64217fb1b88a19dc13</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1006/spmi.1996.0098$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,45974</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2502302$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wybourne, M.N.</creatorcontrib><creatorcontrib>Smith, Jolinda C.</creatorcontrib><creatorcontrib>Berven, C.</creatorcontrib><creatorcontrib>Ramasubramaniam, R.</creatorcontrib><creatorcontrib>Goodnick, S.M.</creatorcontrib><title>Instabilities in quantum point contact structures</title><title>Superlattices and microstructures</title><description>We discuss the appearance of strong nonlinearities including S-type negative differential conductance in the
I–
Vcharacteristics of quantum point contact (QPC) structures. Time-dependent measurements demonstrate that the highly nonlinear d.c.
I–
Vfeatures are associated with a temporal average of random telegraph switching (RTS) between different current levels. The RTS is only observed when the voltage across the device is such that the chemical potential on one side of the QPC is aligned with the bottom of a one-dimensional subband in the QPC. As the chemical potential is moved further into the subband, the switching behavior disappears until the next subband minimum is reached.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Miscellaneous</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0749-6036</issn><issn>1096-3677</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNp1j01LxDAQhoMouFavnnvw2ppJ26Q5yuLHwoIXPYd0kkKkTWuSCv57W1a8CQNzeZ-Z9yHkFmgJlPL7OI-uBCl5Salsz8gOqORFxYU4JzsqallwWvFLchXjB10jNYgdgYOPSXducMnZmDuffy7ap2XM58n5lOPkk8aUxxQWTEuw8Zpc9HqI9uZ3Z-T96fFt_1IcX58P-4djgRU0qZACDWfMUAZCW2AGOsmErAQHCVpgU_dyLYV131jaGF6vub6Drm01SINQZaQ83cUwxRhsr-bgRh2-FVC1CatNWG3CahNegbsTMOuIeuiD9ujiH8Uayqp1MtKeYnYt_-VsUBGd9WiNCxaTMpP778MP6Z9pHA</recordid><startdate>19960101</startdate><enddate>19960101</enddate><creator>Wybourne, M.N.</creator><creator>Smith, Jolinda C.</creator><creator>Berven, C.</creator><creator>Ramasubramaniam, R.</creator><creator>Goodnick, S.M.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19960101</creationdate><title>Instabilities in quantum point contact structures</title><author>Wybourne, M.N. ; Smith, Jolinda C. ; Berven, C. ; Ramasubramaniam, R. ; Goodnick, S.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c315t-97cd622d0217ae12d1b9279376191a7c54f9074c4f5e05d64217fb1b88a19dc13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Miscellaneous</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>online_resources</toplevel><creatorcontrib>Wybourne, M.N.</creatorcontrib><creatorcontrib>Smith, Jolinda C.</creatorcontrib><creatorcontrib>Berven, C.</creatorcontrib><creatorcontrib>Ramasubramaniam, R.</creatorcontrib><creatorcontrib>Goodnick, S.M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Superlattices and microstructures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wybourne, M.N.</au><au>Smith, Jolinda C.</au><au>Berven, C.</au><au>Ramasubramaniam, R.</au><au>Goodnick, S.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Instabilities in quantum point contact structures</atitle><jtitle>Superlattices and microstructures</jtitle><date>1996-01-01</date><risdate>1996</risdate><volume>20</volume><issue>4</issue><spage>419</spage><epage>425</epage><pages>419-425</pages><issn>0749-6036</issn><eissn>1096-3677</eissn><coden>SUMIEK</coden><abstract>We discuss the appearance of strong nonlinearities including S-type negative differential conductance in the
I–
Vcharacteristics of quantum point contact (QPC) structures. Time-dependent measurements demonstrate that the highly nonlinear d.c.
I–
Vfeatures are associated with a temporal average of random telegraph switching (RTS) between different current levels. The RTS is only observed when the voltage across the device is such that the chemical potential on one side of the QPC is aligned with the bottom of a one-dimensional subband in the QPC. As the chemical potential is moved further into the subband, the switching behavior disappears until the next subband minimum is reached.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1006/spmi.1996.0098</doi><tpages>7</tpages></addata></record> |
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| ispartof | Superlattices and microstructures, 1996-01, Vol.20 (4), p.419-425 |
| issn | 0749-6036 1096-3677 |
| language | eng |
| recordid | cdi_crossref_primary_10_1006_spmi_1996_0098 |
| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Miscellaneous Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Instabilities in quantum point contact structures |
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