Indirect exciton absorption and Raman scattering in GaAs-AlGaAs superlattices
Longitudinal optic (LO) phonon assisted indirect exciton creation (X LO), hot carrier relaxation ((e-h) LO) and Raman scattering phenomena are reported in the optical spectra of GaAs-AlGaAs superlattices. Structures of the same dimensions both with and without double heterostructure confining barrie...
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| Veröffentlicht in: | Superlattices and microstructures 1994-01, Vol.15 (3), p.317-317 |
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| container_title | Superlattices and microstructures |
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| creator | Peggs, DW Simmonds, PE Skolnick, MS Smith, GW Whittaker, DM Forshaw, AN Mowbray, DJ Fisher, TA |
| description | Longitudinal optic (LO) phonon assisted indirect exciton creation (X
LO), hot carrier relaxation ((e-h)
LO) and Raman scattering phenomena are reported in the optical spectra of GaAs-AlGaAs superlattices. Structures of the same dimensions both with and without double heterostructure confining barriers are studied. For the structures without confining barriers, continuum transitions are suppressed in photoluminescence excitation (PLE) spectra, and as a result the X
LO, (e-h)
LO and Raman peaks are observed. The X
LO absorption peaks are identified from the observation of a clear threshold in PLE at ℏω
LO (36.4 meV) above the heavy hole exciton peak. The intensity of X
LO is a maximum at 6 meV above the threshold, probably due to dissociation into free carriers at the exciton binding energy (6meV) above ℏω
LO. The influence of non-radiative processes on incoherent (PLE) and coherent (Raman) processes is compared. |
| doi_str_mv | 10.1006/spmi.1994.1061 |
| format | Article |
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LO), hot carrier relaxation ((e-h)
LO) and Raman scattering phenomena are reported in the optical spectra of GaAs-AlGaAs superlattices. Structures of the same dimensions both with and without double heterostructure confining barriers are studied. For the structures without confining barriers, continuum transitions are suppressed in photoluminescence excitation (PLE) spectra, and as a result the X
LO, (e-h)
LO and Raman peaks are observed. The X
LO absorption peaks are identified from the observation of a clear threshold in PLE at ℏω
LO (36.4 meV) above the heavy hole exciton peak. The intensity of X
LO is a maximum at 6 meV above the threshold, probably due to dissociation into free carriers at the exciton binding energy (6meV) above ℏω
LO. The influence of non-radiative processes on incoherent (PLE) and coherent (Raman) processes is compared.</description><identifier>ISSN: 0749-6036</identifier><identifier>EISSN: 1096-3677</identifier><identifier>DOI: 10.1006/spmi.1994.1061</identifier><identifier>CODEN: SUMIEK</identifier><language>eng</language><publisher>Oxford: Elsevier Ltd</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron states ; Exact sciences and technology ; Excitons and related phenomena ; Iii-v semiconductors ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics</subject><ispartof>Superlattices and microstructures, 1994-01, Vol.15 (3), p.317-317</ispartof><rights>1994 Academic Press</rights><rights>1995 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c315t-1c1b000694ff4ab2fa5342379391435be6f8b75ba6ca0b73600025afcf1b1e963</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1006/spmi.1994.1061$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3379925$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Peggs, DW</creatorcontrib><creatorcontrib>Simmonds, PE</creatorcontrib><creatorcontrib>Skolnick, MS</creatorcontrib><creatorcontrib>Smith, GW</creatorcontrib><creatorcontrib>Whittaker, DM</creatorcontrib><creatorcontrib>Forshaw, AN</creatorcontrib><creatorcontrib>Mowbray, DJ</creatorcontrib><creatorcontrib>Fisher, TA</creatorcontrib><title>Indirect exciton absorption and Raman scattering in GaAs-AlGaAs superlattices</title><title>Superlattices and microstructures</title><description>Longitudinal optic (LO) phonon assisted indirect exciton creation (X
LO), hot carrier relaxation ((e-h)
LO) and Raman scattering phenomena are reported in the optical spectra of GaAs-AlGaAs superlattices. Structures of the same dimensions both with and without double heterostructure confining barriers are studied. For the structures without confining barriers, continuum transitions are suppressed in photoluminescence excitation (PLE) spectra, and as a result the X
LO, (e-h)
LO and Raman peaks are observed. The X
LO absorption peaks are identified from the observation of a clear threshold in PLE at ℏω
LO (36.4 meV) above the heavy hole exciton peak. The intensity of X
LO is a maximum at 6 meV above the threshold, probably due to dissociation into free carriers at the exciton binding energy (6meV) above ℏω
LO. The influence of non-radiative processes on incoherent (PLE) and coherent (Raman) processes is compared.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Excitons and related phenomena</subject><subject>Iii-v semiconductors</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><issn>0749-6036</issn><issn>1096-3677</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAQhoMouK5ePefgtWvSpMnmuCy6LqwIoucwSROJdNOSVNF_b0rFm6eZYd53Ph6ErilZUULEbR6OYUWV4qUU9AQtKFGiYkLKU7QgkqtKECbO0UXO74QQxalcoMd9bENydsTuy4axjxhM7tMwhimNLX6GI0ScLYyjSyG-4RDxDja52nRTwPljcKkr3WBdvkRnHrrsrn7jEr3e371sH6rD026_3Rwqy2gzVtRSUy4QinvPwdQeGsZrJhVTlLPGOOHXRjYGhAViJBNFXDfgraeGOiXYEq3muTb1OSfn9ZDCEdK3pkRPMPQEQ08w9ASjGG5mwwDllc4niDbkPxcru1XdFNl6lrly_GdwSWcbXLRuZqTbPvy34QdekHMF</recordid><startdate>19940101</startdate><enddate>19940101</enddate><creator>Peggs, DW</creator><creator>Simmonds, PE</creator><creator>Skolnick, MS</creator><creator>Smith, GW</creator><creator>Whittaker, DM</creator><creator>Forshaw, AN</creator><creator>Mowbray, DJ</creator><creator>Fisher, TA</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19940101</creationdate><title>Indirect exciton absorption and Raman scattering in GaAs-AlGaAs superlattices</title><author>Peggs, DW ; Simmonds, PE ; Skolnick, MS ; Smith, GW ; Whittaker, DM ; Forshaw, AN ; Mowbray, DJ ; Fisher, TA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c315t-1c1b000694ff4ab2fa5342379391435be6f8b75ba6ca0b73600025afcf1b1e963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Excitons and related phenomena</topic><topic>Iii-v semiconductors</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Peggs, DW</creatorcontrib><creatorcontrib>Simmonds, PE</creatorcontrib><creatorcontrib>Skolnick, MS</creatorcontrib><creatorcontrib>Smith, GW</creatorcontrib><creatorcontrib>Whittaker, DM</creatorcontrib><creatorcontrib>Forshaw, AN</creatorcontrib><creatorcontrib>Mowbray, DJ</creatorcontrib><creatorcontrib>Fisher, TA</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Superlattices and microstructures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Peggs, DW</au><au>Simmonds, PE</au><au>Skolnick, MS</au><au>Smith, GW</au><au>Whittaker, DM</au><au>Forshaw, AN</au><au>Mowbray, DJ</au><au>Fisher, TA</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Indirect exciton absorption and Raman scattering in GaAs-AlGaAs superlattices</atitle><jtitle>Superlattices and microstructures</jtitle><date>1994-01-01</date><risdate>1994</risdate><volume>15</volume><issue>3</issue><spage>317</spage><epage>317</epage><pages>317-317</pages><issn>0749-6036</issn><eissn>1096-3677</eissn><coden>SUMIEK</coden><abstract>Longitudinal optic (LO) phonon assisted indirect exciton creation (X
LO), hot carrier relaxation ((e-h)
LO) and Raman scattering phenomena are reported in the optical spectra of GaAs-AlGaAs superlattices. Structures of the same dimensions both with and without double heterostructure confining barriers are studied. For the structures without confining barriers, continuum transitions are suppressed in photoluminescence excitation (PLE) spectra, and as a result the X
LO, (e-h)
LO and Raman peaks are observed. The X
LO absorption peaks are identified from the observation of a clear threshold in PLE at ℏω
LO (36.4 meV) above the heavy hole exciton peak. The intensity of X
LO is a maximum at 6 meV above the threshold, probably due to dissociation into free carriers at the exciton binding energy (6meV) above ℏω
LO. The influence of non-radiative processes on incoherent (PLE) and coherent (Raman) processes is compared.</abstract><cop>Oxford</cop><pub>Elsevier Ltd</pub><doi>10.1006/spmi.1994.1061</doi><tpages>1</tpages></addata></record> |
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| ispartof | Superlattices and microstructures, 1994-01, Vol.15 (3), p.317-317 |
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| language | eng |
| recordid | cdi_crossref_primary_10_1006_spmi_1994_1061 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Excitons and related phenomena Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics |
| title | Indirect exciton absorption and Raman scattering in GaAs-AlGaAs superlattices |
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