On the temperature dependence of the electronic states and the mobility in AlGaAs/GaAs heterostructures
Experiment shows that in AlGaAs/GaAs heterostructures the sheet electron concentration remains almost constant up to a certain temperature, while it increases at higher temperatures. We attempt an interpretation of this temperature dependence, taking into account the fact that in the bulk, n-AlGaAs...
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| Veröffentlicht in: | Superlattices and microstructures 1993-01, Vol.14 (4), p.277-277 |
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| container_title | Superlattices and microstructures |
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| creator | Simserides, Constantinos D. Triberis, Georgios P. |
| description | Experiment shows that in AlGaAs/GaAs heterostructures the sheet electron concentration remains almost constant up to a certain temperature, while it increases at higher temperatures. We attempt an interpretation of this temperature dependence, taking into account the fact that in the bulk, n-AlGaAs deep and shallow donors exist, which independently and by different mechanisms provide electrons to the different conduction band minima of the bulk n-AlGaAs, and contribute to the formation of the Q2DEG. We calculate the electronic states of this structure, the Q2DEG and the bulk concentrations, and the corresponding mobilities as a function of temperature. Our numerical results are in an excellent agreement with experimental data.
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| doi_str_mv | 10.1006/spmi.1993.1139 |
| format | Article |
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PACS:</description><subject>AlGaAs/GaAs</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems</subject><subject>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Exact sciences and technology</subject><subject>Hall measurements</subject><subject>Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions</subject><subject>mobility</subject><subject>Physics</subject><subject>Sheet electron concentration</subject><subject>temperature dependence</subject><issn>0749-6036</issn><issn>1096-3677</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNp1kL1PwzAQxS0EEqWwMntgTXqWEyceqwoKUqUuMFu2c6ZG-ZLtIvW_J2kRG8vd8N67d_oR8sggZwBiFcfO50xKnjPG5RVZMJAi46KqrskCqkJmAri4JXcxfgGALFi1IJ_7nqYD0oTdiEGnY0Da4Ih9g71FOrizii3aFIbeWxqTThip7puz0g3Gtz6dqO_put3qdVzNgx4wYRhiCkc734z35MbpNuLD716Sj5fn981rtttv3zbrXWY5K1NmnBBFVRtjhHGsLnmJzBUWBUBdSQCsdI3cSJSWiVKjq2vmwEBTNpNRMr4k-eWundpjQKfG4DsdToqBmjGpGZOaMakZ0xR4ugRGHa1uXdC99fEvxTlMj9WTrb7YcHr-22NQ0foZUePDxEY1g_-v4QciTX2E</recordid><startdate>19930101</startdate><enddate>19930101</enddate><creator>Simserides, Constantinos D.</creator><creator>Triberis, Georgios P.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930101</creationdate><title>On the temperature dependence of the electronic states and the mobility in AlGaAs/GaAs heterostructures</title><author>Simserides, Constantinos D. ; Triberis, Georgios P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c315t-bf66478bbb6bf18535e1f4ce60087900e7a8e3b9e9c165aef881f0b0d5de1f913</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>AlGaAs/GaAs</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems</topic><topic>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Exact sciences and technology</topic><topic>Hall measurements</topic><topic>Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions</topic><topic>mobility</topic><topic>Physics</topic><topic>Sheet electron concentration</topic><topic>temperature dependence</topic><toplevel>online_resources</toplevel><creatorcontrib>Simserides, Constantinos D.</creatorcontrib><creatorcontrib>Triberis, Georgios P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Superlattices and microstructures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Simserides, Constantinos D.</au><au>Triberis, Georgios P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the temperature dependence of the electronic states and the mobility in AlGaAs/GaAs heterostructures</atitle><jtitle>Superlattices and microstructures</jtitle><date>1993-01-01</date><risdate>1993</risdate><volume>14</volume><issue>4</issue><spage>277</spage><epage>277</epage><pages>277-277</pages><issn>0749-6036</issn><eissn>1096-3677</eissn><coden>SUMIEK</coden><abstract>Experiment shows that in AlGaAs/GaAs heterostructures the sheet electron concentration remains almost constant up to a certain temperature, while it increases at higher temperatures. We attempt an interpretation of this temperature dependence, taking into account the fact that in the bulk, n-AlGaAs deep and shallow donors exist, which independently and by different mechanisms provide electrons to the different conduction band minima of the bulk n-AlGaAs, and contribute to the formation of the Q2DEG. We calculate the electronic states of this structure, the Q2DEG and the bulk concentrations, and the corresponding mobilities as a function of temperature. Our numerical results are in an excellent agreement with experimental data.
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| ispartof | Superlattices and microstructures, 1993-01, Vol.14 (4), p.277-277 |
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| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | AlGaAs/GaAs Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Hall measurements Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions mobility Physics Sheet electron concentration temperature dependence |
| title | On the temperature dependence of the electronic states and the mobility in AlGaAs/GaAs heterostructures |
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