Real-space transfer by hot electron resonant tunneling

Demonstrations of real-space transfer transistors have primarily shown real-space transfer current due to thermionic emission of heated channel electrons over low heterostructure barriers. In this paper we demonstrate real-space transfer of hot electrons due to resonant tunneling through multiple Al...

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Veröffentlicht in:	Superlattices and microstructures 1993-01, Vol.13 (4), p.397-397
Hauptverfasser:	Higman, T.K., Chen, Jihong, Hagedorn, M.S., Williamson, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronics Exact sciences and technology Field effect devices Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Interfaces Junction breakdown and tunneling devices (including resonance tunneling devices) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Tunneling
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Beschreibung
Zusammenfassung:	Demonstrations of real-space transfer transistors have primarily shown real-space transfer current due to thermionic emission of heated channel electrons over low heterostructure barriers. In this paper we demonstrate real-space transfer of hot electrons due to resonant tunneling through multiple AlAs/GaAs/AlAs double barrier structures.
ISSN:	0749-6036 1096-3677
DOI:	10.1006/spmi.1993.1078