Molecular Precursors for the Phase‐Change Material Germanium‐Antimony‐Telluride, Ge 2 Sb 2 Te 5 (GST)

Molecular Precursors for the Phase‐Change Material Germanium‐Antimony‐Telluride, Ge 2 Sb 2 Te 5 (GST)

This review provides an overview of the precursor chemistry that has been developed around the phase‐change material germanium‐antimony‐telluride, Ge 2 Sb 2 Te 5 (GST). Thin films of GST can be deposited by employing either chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques....

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Veröffentlicht in:Zeitschrift für anorganische und allgemeine Chemie (1950) 2017-10, Vol.643 (18), p.1150-1166
Hauptverfasser: Harmgarth, Nicole, Zörner, Florian, Liebing, Phil, Burte, Edmund P., Silinskas, Mindaugas, Engelhardt, Felix, Edelmann, Frank T.
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container_issue 18
container_start_page 1150
container_title Zeitschrift für anorganische und allgemeine Chemie (1950)
container_volume 643
creator Harmgarth, Nicole
Zörner, Florian
Liebing, Phil
Burte, Edmund P.
Silinskas, Mindaugas
Engelhardt, Felix
Edelmann, Frank T.
description This review provides an overview of the precursor chemistry that has been developed around the phase‐change material germanium‐antimony‐telluride, Ge 2 Sb 2 Te 5 (GST). Thin films of GST can be deposited by employing either chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques. In both cases, the success of the layer deposition crucially depends on the proper choice of suitable molecular precursors. Previously reported processes mainly relied on simple alkoxides, alkyls, amides and halides of germanium, antimony, and tellurium. More sophisticated precursor design provided a number of promising new aziridinides and guanidinates.
doi_str_mv 10.1002/zaac.201700211
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title Molecular Precursors for the Phase‐Change Material Germanium‐Antimony‐Telluride, Ge 2 Sb 2 Te 5 (GST)
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