Laser Transfer and Firing of NiV Seed Layer for the Metallization of Silicon Heterojunction Solar Cells by Cu‐Plating

We present a laser‐based method for the metallization of silicon heterojunction solar cells by Cu‐plating. It consists of first applying a dielectric layer on the transparent conductive oxide (TCO) as a plating mask. Then, a NiV seed is transferred by laser induced forward transfer (LIFT) from a pla...

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Veröffentlicht in:Solar RRL 2017-08, Vol.1 (8), p.1700085-n/a
Hauptverfasser: Rodofili, Andreas, Wolke, Winfried, Kroely, Laurent, Bivour, Martin, Cimiotti, Gisela, Bartsch, Jonas, Glatthaar, Markus, Nekarda, Jan
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Sprache:eng
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