Sustained Area-Selectivity in Atomic Layer Deposition of Ir Films: Utilization of Dual Effects of O 3 in Deposition and Etching

Area-selective deposition (ASD) based on self-aligned technology has emerged as a promising solution for resolving misalignment issues during ultrafine patterning processes. Despite its potential, the problems of area-selectivity losing beyond a certain thickness remain critical in ASD applications....

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-11, Vol.20 (46), p.e2402543
Hauptverfasser: Kim, Han, Kim, Taeseok, Chung, Hong Keun, Jeon, Jihoon, Kim, Sung-Chul, Won, Sung Ok, Harada, Ryosuke, Tsugawa, Tomohiro, Kim, Sangtae, Kim, Seong Keun
Format: Artikel
Sprache:eng
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