WSe 2 Photovoltaic Device Based on Intramolecular p-n Junction

High quality p-n junctions based on 2D layered materials (2DLMs) are urgent to exploit, because of their unique properties such as flexibility, high absorption, and high tunability which may be utilized in next-generation photovoltaic devices. Based on transfer technology, large amounts of vertical...

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Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2019-03, Vol.15 (12), p.e1805545
Hauptverfasser:	Tang, Yicheng, Wang, Zhen, Wang, Peng, Wu, Feng, Wang, Yueming, Chen, Yunfeng, Wang, Hailu, Peng, Meng, Shan, Chongxin, Zhu, Zhihong, Qin, Shiqiao, Hu, Weida
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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