XPS and SIMS depth profiling of chlorine in high-temperature oxynitrides

Thin oxides deposited by low‐pressure chemical vapour deposition (LPCVD) at high temperature are being widely investigated in VLSI technology to be used as possible substitutes for the usual thermal oxides. High‐temperature oxide deposition involves reactions between N2O and dichlorosilane or silane...

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Veröffentlicht in:Surface and interface analysis 2002-08, Vol.34 (1), p.271-275
Hauptverfasser: Vanzetti, L., Bersani, M., Sbetti, M., Iacob, E., Giubertoni, D., Barozzi, M., Zonca, R., Crivelli, B., Carpanese, C., Zanderigo, F.
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Sprache:eng
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