62‐1: Distinguished Student Paper: Ultraviolet Photodetectors and Readout Based on a‐IGZO Semiconductor Technology
In this work real‐time ultraviolet photodetectors are realized through metal‐semiconductor‐metal (MSM) structures. Amorphous indium gallium zinc oxide (a‐IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance ampli...
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| Veröffentlicht in: | SID International Symposium Digest of technical papers 2023-06, Vol.54 (1), p.880-883 |
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| container_title | SID International Symposium Digest of technical papers |
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| creator | Schellander, Yannick Winter, Marius Schamber, Maurice Munkes, Fabian Schalberger, Patrick Kuebler, Harald Pfau, Tilman Fruehauf, Norbert |
| description | In this work real‐time ultraviolet photodetectors are realized through metal‐semiconductor‐metal (MSM) structures. Amorphous indium gallium zinc oxide (a‐IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an allenhancement a‐IGZO thin film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time t
RES
and a good noise equivalent power value NEP. |
| doi_str_mv | 10.1002/sdtp.16705 |
| format | Article |
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RES
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RES
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RES
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| ispartof | SID International Symposium Digest of technical papers, 2023-06, Vol.54 (1), p.880-883 |
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| source | Wiley Online Library Journals Frontfile Complete |
| title | 62‐1: Distinguished Student Paper: Ultraviolet Photodetectors and Readout Based on a‐IGZO Semiconductor Technology |
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