48‐2: Vertical Oxide Semiconductor Transistor Suitable for High‐Resolution OLED Display

48‐2: Vertical Oxide Semiconductor Transistor Suitable for High‐Resolution OLED Display

We develop a vertical oxide semiconductor transistor and fabricate a 513‐ppi OLED display with RGB strip arrangement. A pixel has an internal compensation function and consists of vertical transistors etc. The process for the display is simpler than that using LTPO and should bring high resolution a...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2023-06, Vol.54 (1), p.695-698
Hauptverfasser: Saito, Motoharu, Shishido, Hideaki, Kawashima, Susumu, Eguchi, Shingo, Misawa, Chieko, Mori, Hidenori, Koezuka, Emi, Kusunoki, Koji, Okazaki, Kenichi, Seo, Norihiko, Yamazaki, Shunpei
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container_title SID International Symposium Digest of technical papers
container_volume 54
creator Saito, Motoharu
Shishido, Hideaki
Kawashima, Susumu
Eguchi, Shingo
Misawa, Chieko
Mori, Hidenori
Koezuka, Emi
Kusunoki, Koji
Okazaki, Kenichi
Seo, Norihiko
Yamazaki, Shunpei
description We develop a vertical oxide semiconductor transistor and fabricate a 513‐ppi OLED display with RGB strip arrangement. A pixel has an internal compensation function and consists of vertical transistors etc. The process for the display is simpler than that using LTPO and should bring high resolution and low power consumption.
doi_str_mv 10.1002/sdtp.16654
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title 48‐2: Vertical Oxide Semiconductor Transistor Suitable for High‐Resolution OLED Display
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