37‐2: Distinguished Paper: Efficiency Enhancement of Submicron‐size Light‐Emitting Diodes by Triple Dielectric Layers

We demonstrate highly efficient submicron scale nanorod LEDs (nLEDs) passivated by the triple dielectric layers. The diameter, length, and wavelength at a peak EQE of nLEDs are 580nm, 5¼m, and 460nm, respectively. We report a peak EQE of 22.15 ± 0.34% with HfO2 based triple dielectric layer. We also explore the relation of indium‐fluctuation in multi quantum wells (MQWs) to sidewall effect of micro LEDs. We show that higher indium content in MQWs successfully reduce non‐radiative recombination on sidewall of InGaN blue nLEDs.