Back Cover: Strain‐Free GaSb Quantum Dots as Single‐Photon Sources in the Telecom S‐Band (Adv. Quantum Technol. 12/2023)

Back Cover: Strain‐Free GaSb Quantum Dots as Single‐Photon Sources in the Telecom S‐Band (Adv. Quantum Technol. 12/2023)

Strain‐free gallium‐antimonide (GaSb) quantum dots are fabricated via local droplet etching and subsequent nanohole infilling and investigated for their (quantum‐) optical properties. Time‐resolved photoluminescence and second‐order autocorrelation measurements are conducted on an excitonic transiti...

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Veröffentlicht in:Advanced quantum technologies (Online) 2023-12, Vol.6 (12), p.n/a
Hauptverfasser: Michl, Johannes, Peniakov, Giora, Pfenning, Andreas, Hilska, Joonas, Chellu, Abhiroop, Bader, Andreas, Guina, Mircea, Höfling, Sven, Hakkarainen, Teemu, Huber‐Loyola, Tobias
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container_issue 12
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container_title Advanced quantum technologies (Online)
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creator Michl, Johannes
Peniakov, Giora
Pfenning, Andreas
Hilska, Joonas
Chellu, Abhiroop
Bader, Andreas
Guina, Mircea
Höfling, Sven
Hakkarainen, Teemu
Huber‐Loyola, Tobias
description Strain‐free gallium‐antimonide (GaSb) quantum dots are fabricated via local droplet etching and subsequent nanohole infilling and investigated for their (quantum‐) optical properties. Time‐resolved photoluminescence and second‐order autocorrelation measurements are conducted on an excitonic transition, showcasing antibunching and thereby highlighting the material platform's potential as a resource for generating non‐classical light in the telecom range. More details can be found in article number 2300180 by Johannes Michl, Tobias Huber‐Loyola, and co‐workers.
doi_str_mv 10.1002/qute.202370125
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title Back Cover: Strain‐Free GaSb Quantum Dots as Single‐Photon Sources in the Telecom S‐Band (Adv. Quantum Technol. 12/2023)
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