Theoretical studies on the transport property of oligosilane with p-n junction

The electron transport properties of a novel p‐n junction nanowire caused by boron‐doping and phosphorus‐doping are investigated using density functional theory combined with the nonequilibrium Green's functions formalism. A satisfying rectification is observed. This is a reasonable result afte...

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Veröffentlicht in:	International journal of quantum chemistry 2011-12, Vol.111 (15), p.4214-4223
Hauptverfasser:	Zhang, Gui-Ling, Yuan, Hong-Liang, Zhang, Hui, Shang, Yan, Sun, Miao
Format:	Artikel
Sprache:	eng
Schlagworte:	oligosilane p-n junction theoretical study transport property
Online-Zugang:	Volltext
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