Light emission due to the quantum confinement of carriers in silicon-based nanostructures

In the field of Si nanoscale ultralarge‐scale integration, the quantum confinement effect is undesirable with respect to the device characteristics and performance because the carriers are entirely confined in nanoscale or low‐dimensional structures. Significant efforts are being made with regard to...

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Veröffentlicht in:	International journal of quantum chemistry 2009-10, Vol.109 (12), p.2764-2772
Hauptverfasser:	Hayafuji, Yoshinori, Ohmori, Kengo, Igei, Kazushi, Kambara, Nobuo
Format:	Artikel
Sprache:	eng
Schlagworte:	DV-Xα method light emission nano-electronics quantum confinement effect Si-based nanostructure
Online-Zugang:	Volltext
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