A Mechanical–Electrical Model to Describe the Negative Differential Resistance in Membranotronic Devices
Membranotronics Membranotronic devices rely on the emergence of negative differential resistance (NDR). In article number 2300397, Daniil Karnaushenko and co‐workers provide a model for simulating the current–voltage characteristic of such devices that consist of a membrane featuring a hole through...
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Veröffentlicht in: | Physica status solidi. PSS-RRL. Rapid research letters 2024-05, Vol.18 (5), p.n/a |
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creator | Huber, Max Schuster, Jörg Schmidt, Oliver G. Kuhn, Harald Karnaushenko, Daniil |
description | Membranotronics
Membranotronic devices rely on the emergence of negative differential resistance (NDR). In article number 2300397, Daniil Karnaushenko and co‐workers provide a model for simulating the current–voltage characteristic of such devices that consist of a membrane featuring a hole through which ionic current flows. Due to electrostatic pressure, the membrane deforms and the hole closes leading to NDR as observed in experiment. The cover picture shows a sketch of the current–voltage characteristic as well as the membrane in different states of its deformation. |
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Membranotronic devices rely on the emergence of negative differential resistance (NDR). In article number 2300397, Daniil Karnaushenko and co‐workers provide a model for simulating the current–voltage characteristic of such devices that consist of a membrane featuring a hole through which ionic current flows. Due to electrostatic pressure, the membrane deforms and the hole closes leading to NDR as observed in experiment. The cover picture shows a sketch of the current–voltage characteristic as well as the membrane in different states of its deformation.</description><issn>1862-6254</issn><issn>1862-6270</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOAjEUhhujiYhuXfcFBk8vc1sSwEsCaoD9pFNOpWSYIW2DYec7-IY-iSUYXbo65yT_9yfnI-SWwYAB8Lud927AgcscgMEZ6bEi40nGczj_3VN5Sa683wCkZS5Fj2yGdIZ6rVqrVfP18TlpUAd3POisW2FDQ0fH6LWzNdKwRvqMbyrYPdKxNQYdtsHG7By99UG1GqltY-O2dqrtgutib-T3VqO_JhdGNR5vfmafLO8ny9FjMn15eBoNp4kuSkhyI2oucl1kutAKjUQuZAmZNFqaVYoCM6hlKstaFAhKyPgJSqkLZnjJNRN9MjjVatdFI2iqnbNb5Q4Vg-ooqjqKqn5FRaA8Ae-2wcM_6ep1sZj_sd-QU2-O</recordid><startdate>202405</startdate><enddate>202405</enddate><creator>Huber, Max</creator><creator>Schuster, Jörg</creator><creator>Schmidt, Oliver G.</creator><creator>Kuhn, Harald</creator><creator>Karnaushenko, Daniil</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-2406-0513</orcidid><orcidid>https://orcid.org/0000-0003-4484-0354</orcidid><orcidid>https://orcid.org/0000-0001-9503-8367</orcidid><orcidid>https://orcid.org/0009-0008-9749-8330</orcidid><orcidid>https://orcid.org/0000-0003-3127-1527</orcidid></search><sort><creationdate>202405</creationdate><title>A Mechanical–Electrical Model to Describe the Negative Differential Resistance in Membranotronic Devices</title><author>Huber, Max ; Schuster, Jörg ; Schmidt, Oliver G. ; Kuhn, Harald ; Karnaushenko, Daniil</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c890-7f3b237c86c8caef4e2349064fc4fd5e3e60b4549b38e0a34059e44c81f292c13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huber, Max</creatorcontrib><creatorcontrib>Schuster, Jörg</creatorcontrib><creatorcontrib>Schmidt, Oliver G.</creatorcontrib><creatorcontrib>Kuhn, Harald</creatorcontrib><creatorcontrib>Karnaushenko, Daniil</creatorcontrib><collection>CrossRef</collection><jtitle>Physica status solidi. PSS-RRL. Rapid research letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huber, Max</au><au>Schuster, Jörg</au><au>Schmidt, Oliver G.</au><au>Kuhn, Harald</au><au>Karnaushenko, Daniil</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Mechanical–Electrical Model to Describe the Negative Differential Resistance in Membranotronic Devices</atitle><jtitle>Physica status solidi. PSS-RRL. Rapid research letters</jtitle><date>2024-05</date><risdate>2024</risdate><volume>18</volume><issue>5</issue><epage>n/a</epage><issn>1862-6254</issn><eissn>1862-6270</eissn><abstract>Membranotronics
Membranotronic devices rely on the emergence of negative differential resistance (NDR). In article number 2300397, Daniil Karnaushenko and co‐workers provide a model for simulating the current–voltage characteristic of such devices that consist of a membrane featuring a hole through which ionic current flows. Due to electrostatic pressure, the membrane deforms and the hole closes leading to NDR as observed in experiment. The cover picture shows a sketch of the current–voltage characteristic as well as the membrane in different states of its deformation.</abstract><doi>10.1002/pssr.202470010</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-2406-0513</orcidid><orcidid>https://orcid.org/0000-0003-4484-0354</orcidid><orcidid>https://orcid.org/0000-0001-9503-8367</orcidid><orcidid>https://orcid.org/0009-0008-9749-8330</orcidid><orcidid>https://orcid.org/0000-0003-3127-1527</orcidid></addata></record> |
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title | A Mechanical–Electrical Model to Describe the Negative Differential Resistance in Membranotronic Devices |
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