Back Cover: Localized states emission in type‐I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy (Phys. Status Solidi RRL 3/2017)

Localized centers in multiple quantum wells (MQWs) can easily trap free carriers and produce localized states. Localized states expand the conduction‐ and valance‐band edges and lead to a tail of the density of states. It greatly affects the optical properties as well as the carrier dynamics. Xiaoti...

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2017-03, Vol.11 (3), p.1770314-n/a
Hauptverfasser:	Ge, Xiaotian, Wang, Dengkui, Gao, Xian, Fang, Xuan, Niu, Shouzhu, Gao, Hongyi, Tang, Jilong, Wang, Xiaohua, Wei, Zhipeng, Chen, Rui
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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