Low leakage stoichiometric SrTiO 3 dielectric for advanced metal–insulator–metal capacitors

Metal–insulator–metal capacitors (MIMCAP) with stoichiometric SrTiO 3 dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr‐rich STO seed layer, with the Ti‐rich STO top layer. The resulted stoichiometric SrTiO 3 would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr‐rich STO which allow further equivalent oxide thickness downscaling. Schematic of MIMCAP with stoichiometric STO dielectric formed from bottom Sr‐rich STO and top Ti‐rich STO after intermixing during crystallization anneal. magnified image Schematic of MIMCAP with stoichiometric STO dielectric formed from bottom Sr‐rich STO and top Ti‐rich STO after intermixing during crystallization anneal. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)