Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al 2 O 3 insulator
The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n ( p )‐Hg 0.78 Cd 0.22 Te with insulator coating SiO 2 /Si 3 N 4 and Al 2 O 3 in the test signal frequency range 10 kHz‐1 MHz at temperatures ranging from 8 to 220 K. The main parameters of MI...
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| Veröffentlicht in: | Physica status solidi. C 2016-07, Vol.13 (7-9), p.647-650 |
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| container_title | Physica status solidi. C |
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| creator | Voitsekhovskii, Alexander V. Nesmelov, Sergey N. Dzyadukh, Stanislav M. Vasil`ev, Vladimir V. Varavin, Vasiliy S. Dvoretsky, Sergey A. Mikhailov, Nikolay N. Yakushev, Maxim V. Sidorov, Georgiy Y. |
| description | The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE
n
(
p
)‐Hg
0.78
Cd
0.22
Te with insulator coating SiO
2
/Si
3
N
4
and Al
2
O
3
in the test signal frequency range 10 kHz‐1 MHz at temperatures ranging from 8 to 220 K. The main parameters of MIS structures with different insulators were determined. MIS structures with Al
2
O
3
have a large enough insulator capacitance (compared to SiO
2
/Si
3
N
4
), a significant modulation capacitance on the CV characteristics, high dielectric strength and low values of the flat‐band voltage. The effective charge density found from the value of the flat‐band voltage and slow interface trap density for structures with Al
2
O
3
comparable with the corresponding densities for structures with SiO
2
/Si
3
N
4
. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.201510227 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1002_pssc_201510227</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1002_pssc_201510227</sourcerecordid><originalsourceid>FETCH-LOGICAL-c847-3a847e102d832feda38d61d1a4e1cbb92c7b9b683d2b6570e719ac6e395b6a043</originalsourceid><addsrcrecordid>eNo9kM1Og0AUhSdGE2t16_q-AHXuDAywRFJtkzZdiGsyfyCGApmBGHc-gs_YJ5FG4-acs_py8hFyj3SFlLKHwXu9YhQjpIzFF2SBAmmAImSX804ECwSP8JrceP9OKY8oigV5zcyxGUfZaQt9BfvtC_jRTXqcnPWgpLcG-g5qJ401p6_vWg6wf1zDps5NYeGjGd8ga4HBATg0nZ9aOfbullxVsvX27q-XpHhaF_km2B2et3m2C3QSxgGXc9r5rUk4q6yRPDECDcrQolYqZTpWqRIJN0yJKKY2xlRqYXkaKSFpyJdk9YvVrvfe2aocXHOU7rNEWp6dlGcn5b8T_gMCJFSH</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al 2 O 3 insulator</title><source>Access via Wiley Online Library</source><creator>Voitsekhovskii, Alexander V. ; Nesmelov, Sergey N. ; Dzyadukh, Stanislav M. ; Vasil`ev, Vladimir V. ; Varavin, Vasiliy S. ; Dvoretsky, Sergey A. ; Mikhailov, Nikolay N. ; Yakushev, Maxim V. ; Sidorov, Georgiy Y.</creator><creatorcontrib>Voitsekhovskii, Alexander V. ; Nesmelov, Sergey N. ; Dzyadukh, Stanislav M. ; Vasil`ev, Vladimir V. ; Varavin, Vasiliy S. ; Dvoretsky, Sergey A. ; Mikhailov, Nikolay N. ; Yakushev, Maxim V. ; Sidorov, Georgiy Y.</creatorcontrib><description>The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE
n
(
p
)‐Hg
0.78
Cd
0.22
Te with insulator coating SiO
2
/Si
3
N
4
and Al
2
O
3
in the test signal frequency range 10 kHz‐1 MHz at temperatures ranging from 8 to 220 K. The main parameters of MIS structures with different insulators were determined. MIS structures with Al
2
O
3
have a large enough insulator capacitance (compared to SiO
2
/Si
3
N
4
), a significant modulation capacitance on the CV characteristics, high dielectric strength and low values of the flat‐band voltage. The effective charge density found from the value of the flat‐band voltage and slow interface trap density for structures with Al
2
O
3
comparable with the corresponding densities for structures with SiO
2
/Si
3
N
4
. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201510227</identifier><language>eng</language><ispartof>Physica status solidi. C, 2016-07, Vol.13 (7-9), p.647-650</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c847-3a847e102d832feda38d61d1a4e1cbb92c7b9b683d2b6570e719ac6e395b6a043</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27926,27927</link.rule.ids></links><search><creatorcontrib>Voitsekhovskii, Alexander V.</creatorcontrib><creatorcontrib>Nesmelov, Sergey N.</creatorcontrib><creatorcontrib>Dzyadukh, Stanislav M.</creatorcontrib><creatorcontrib>Vasil`ev, Vladimir V.</creatorcontrib><creatorcontrib>Varavin, Vasiliy S.</creatorcontrib><creatorcontrib>Dvoretsky, Sergey A.</creatorcontrib><creatorcontrib>Mikhailov, Nikolay N.</creatorcontrib><creatorcontrib>Yakushev, Maxim V.</creatorcontrib><creatorcontrib>Sidorov, Georgiy Y.</creatorcontrib><title>Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al 2 O 3 insulator</title><title>Physica status solidi. C</title><description>The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE
n
(
p
)‐Hg
0.78
Cd
0.22
Te with insulator coating SiO
2
/Si
3
N
4
and Al
2
O
3
in the test signal frequency range 10 kHz‐1 MHz at temperatures ranging from 8 to 220 K. The main parameters of MIS structures with different insulators were determined. MIS structures with Al
2
O
3
have a large enough insulator capacitance (compared to SiO
2
/Si
3
N
4
), a significant modulation capacitance on the CV characteristics, high dielectric strength and low values of the flat‐band voltage. The effective charge density found from the value of the flat‐band voltage and slow interface trap density for structures with Al
2
O
3
comparable with the corresponding densities for structures with SiO
2
/Si
3
N
4
. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNo9kM1Og0AUhSdGE2t16_q-AHXuDAywRFJtkzZdiGsyfyCGApmBGHc-gs_YJ5FG4-acs_py8hFyj3SFlLKHwXu9YhQjpIzFF2SBAmmAImSX804ECwSP8JrceP9OKY8oigV5zcyxGUfZaQt9BfvtC_jRTXqcnPWgpLcG-g5qJ401p6_vWg6wf1zDps5NYeGjGd8ga4HBATg0nZ9aOfbullxVsvX27q-XpHhaF_km2B2et3m2C3QSxgGXc9r5rUk4q6yRPDECDcrQolYqZTpWqRIJN0yJKKY2xlRqYXkaKSFpyJdk9YvVrvfe2aocXHOU7rNEWp6dlGcn5b8T_gMCJFSH</recordid><startdate>201607</startdate><enddate>201607</enddate><creator>Voitsekhovskii, Alexander V.</creator><creator>Nesmelov, Sergey N.</creator><creator>Dzyadukh, Stanislav M.</creator><creator>Vasil`ev, Vladimir V.</creator><creator>Varavin, Vasiliy S.</creator><creator>Dvoretsky, Sergey A.</creator><creator>Mikhailov, Nikolay N.</creator><creator>Yakushev, Maxim V.</creator><creator>Sidorov, Georgiy Y.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201607</creationdate><title>Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al 2 O 3 insulator</title><author>Voitsekhovskii, Alexander V. ; Nesmelov, Sergey N. ; Dzyadukh, Stanislav M. ; Vasil`ev, Vladimir V. ; Varavin, Vasiliy S. ; Dvoretsky, Sergey A. ; Mikhailov, Nikolay N. ; Yakushev, Maxim V. ; Sidorov, Georgiy Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c847-3a847e102d832feda38d61d1a4e1cbb92c7b9b683d2b6570e719ac6e395b6a043</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Voitsekhovskii, Alexander V.</creatorcontrib><creatorcontrib>Nesmelov, Sergey N.</creatorcontrib><creatorcontrib>Dzyadukh, Stanislav M.</creatorcontrib><creatorcontrib>Vasil`ev, Vladimir V.</creatorcontrib><creatorcontrib>Varavin, Vasiliy S.</creatorcontrib><creatorcontrib>Dvoretsky, Sergey A.</creatorcontrib><creatorcontrib>Mikhailov, Nikolay N.</creatorcontrib><creatorcontrib>Yakushev, Maxim V.</creatorcontrib><creatorcontrib>Sidorov, Georgiy Y.</creatorcontrib><collection>CrossRef</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Voitsekhovskii, Alexander V.</au><au>Nesmelov, Sergey N.</au><au>Dzyadukh, Stanislav M.</au><au>Vasil`ev, Vladimir V.</au><au>Varavin, Vasiliy S.</au><au>Dvoretsky, Sergey A.</au><au>Mikhailov, Nikolay N.</au><au>Yakushev, Maxim V.</au><au>Sidorov, Georgiy Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al 2 O 3 insulator</atitle><jtitle>Physica status solidi. C</jtitle><date>2016-07</date><risdate>2016</risdate><volume>13</volume><issue>7-9</issue><spage>647</spage><epage>650</epage><pages>647-650</pages><issn>1862-6351</issn><eissn>1610-1642</eissn><abstract>The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE
n
(
p
)‐Hg
0.78
Cd
0.22
Te with insulator coating SiO
2
/Si
3
N
4
and Al
2
O
3
in the test signal frequency range 10 kHz‐1 MHz at temperatures ranging from 8 to 220 K. The main parameters of MIS structures with different insulators were determined. MIS structures with Al
2
O
3
have a large enough insulator capacitance (compared to SiO
2
/Si
3
N
4
), a significant modulation capacitance on the CV characteristics, high dielectric strength and low values of the flat‐band voltage. The effective charge density found from the value of the flat‐band voltage and slow interface trap density for structures with Al
2
O
3
comparable with the corresponding densities for structures with SiO
2
/Si
3
N
4
. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><doi>10.1002/pssc.201510227</doi><tpages>4</tpages></addata></record> |
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| ispartof | Physica status solidi. C, 2016-07, Vol.13 (7-9), p.647-650 |
| issn | 1862-6351 1610-1642 |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_pssc_201510227 |
| source | Access via Wiley Online Library |
| title | Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al 2 O 3 insulator |
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