Metallic conductivity and weak antilocalization in Bi 2 Te 2.7 Se 0.3 thin films

Metallic conductivity and weak antilocalization in Bi 2 Te 2.7 Se 0.3 thin films

Submicron thin films of Bi 2 Te 2,7 Se 0,3 solid solution is synthesized by thermal vacuum evaporation. The films are then subjected to after‐growth vacuum annealing and characterized using X‐ray diffraction and confocal laser microscopy techniques. Electron transport in the synthesized films is stu...

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Veröffentlicht in:Physica status solidi. C 2015-06, Vol.12 (6), p.822-825
Hauptverfasser: Abdullayev, Nadir A., Kerimova, Afet M., Aliquliyeva, Khayala V., Shim, Yong Gu, Mimura, Kojiro, Wakita, Kazuki, Alekperov, Oktay Z., Mamedov, Nazim T., Zverev, Vladimir N.
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container_issue 6
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container_title Physica status solidi. C
container_volume 12
creator Abdullayev, Nadir A.
Kerimova, Afet M.
Aliquliyeva, Khayala V.
Shim, Yong Gu
Mimura, Kojiro
Wakita, Kazuki
Alekperov, Oktay Z.
Mamedov, Nazim T.
Zverev, Vladimir N.
description Submicron thin films of Bi 2 Te 2,7 Se 0,3 solid solution is synthesized by thermal vacuum evaporation. The films are then subjected to after‐growth vacuum annealing and characterized using X‐ray diffraction and confocal laser microscopy techniques. Electron transport in the synthesized films is studied over the temperature range of 1.4‐300 K at magnetic fields up to 8 T. Electron localization due to electron‐electron interaction, along with weak anti‐localization effect at weak magnetic fields and temperatures below 8 K is observed. The latter effect is commonly encountered in thin films of topological insulators grown by molecular beam epitaxy and has therefore been ascribed to the manifestation of the topological surface states. Finally, phase coherence length is estimated.
doi_str_mv 10.1002/pssc.201400338
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title Metallic conductivity and weak antilocalization in Bi 2 Te 2.7 Se 0.3 thin films
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