Fabrication of Cu 2 ZnSnSe 4 thin films by selenization of precursor using Cu 2 ZnSnSe 4 compound for photovoltaic applications

Cu 2 ZnSnSe 4 ingot was synthesized and then used it and Na 2 Se powder as evaporation materials to prepare a precursor for selenization process in order to fabricate Cu 2 ZnSnSe 4 thin films for solar cell applications. From EPMA analysis, the Sn content in the thin films was approximately constant with increasing Sn mole ratio and the Se content was under 50 at.% in the first experiment. The Se content in the thin films increased to around 50 at.% by the addition of Se layer in second experiment. XRD study showed that the thin films had a kesterite phase in Cu 2 ZnSnSe 4 . The Se layer addition enhanced to grow thin films having a close‐packed structure and columnar grains. Cu 2 ZnSnSe 4 thin film solar cells demonstrated V oc = 282 mV, I sc = 3.00 mA/cm 2 . (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)