Morphology evolution and optical properties of GaN nano-pyramids grown by selective area MOVPE
The evolution of GaN nano‐pyramid growth by selective area metalorganic vapor phase epitaxy (SA‐MOVPE) on GaN/c‐plane sapphire templates with extremely low pattern fill factor and large inter‐hole spacing was studied with scanning electron microscopy (SEM). The optical nanostructure characteristics...
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| Veröffentlicht in: | Physica status solidi. C 2012-03, Vol.9 (3-4), p.624-627 |
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| container_title | Physica status solidi. C |
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| creator | Winden, Andreas Mikulics, Martin Haab, Anna Stoica, Toma von der Ahe, Martina Wirtz, Konrad Hardtdegen, Hilde Grützmacher, Detlev |
| description | The evolution of GaN nano‐pyramid growth by selective area metalorganic vapor phase epitaxy (SA‐MOVPE) on GaN/c‐plane sapphire templates with extremely low pattern fill factor and large inter‐hole spacing was studied with scanning electron microscopy (SEM). The optical nanostructure characteristics were investigated by micro‐photoluminescence spectroscopy at room temperature. It was found that sub‐100 nm structures can be fabricated by controlling the growth time and mask opening size. Single nanostructures exhibit more intense luminescence and a red shift of the band edge transition compared to the GaN layer. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.201100411 |
| format | Article |
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The optical nanostructure characteristics were investigated by micro‐photoluminescence spectroscopy at room temperature. It was found that sub‐100 nm structures can be fabricated by controlling the growth time and mask opening size. Single nanostructures exhibit more intense luminescence and a red shift of the band edge transition compared to the GaN layer. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201100411</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>GaN ; micro-photoluminescence ; MOVPE ; nano-pyramids ; selective area growth ; strain</subject><ispartof>Physica status solidi. C, 2012-03, Vol.9 (3-4), p.624-627</ispartof><rights>Copyright © 2012 WILEY‐VCH Verlag GmbH & Co. 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KGaA, Weinheim)</description><subject>GaN</subject><subject>micro-photoluminescence</subject><subject>MOVPE</subject><subject>nano-pyramids</subject><subject>selective area growth</subject><subject>strain</subject><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQRS0EEqWwZe0fSPHYiZMsUdUHUl9SS7rDchOnGNI4skNL_p5UQRU7VnNHuucuDkKPQAZACH2qnEsHlED7-ABXqAcciAfcp9dtjjj1OAvgFt0590EICwjwHnqbG1u9m8LsG6yOpviqtSmxLDNsqlqnssCVNZWytVYOmxxP5AKXsjRe1Vh50JnDe2tOJd412KlCpbU-Kiytkni-TFaje3STy8Kph9_bR6_j0WY49WbLycvweealLGbgsTgOd5LIQGZsx1kOoU9TypiM_DAjioEfcxlDnrGIUpWnbSPz8yBgYZsjCFgfDbrd1BrnrMpFZfVB2kYAEWc74mxHXOy0QNwBJ12o5p-2WK3Xw7-s17Ha1er7wkr7KXjIwkBsFxMxTqJNsk2mYst-ADNjeV0</recordid><startdate>201203</startdate><enddate>201203</enddate><creator>Winden, Andreas</creator><creator>Mikulics, Martin</creator><creator>Haab, Anna</creator><creator>Stoica, Toma</creator><creator>von der Ahe, Martina</creator><creator>Wirtz, Konrad</creator><creator>Hardtdegen, Hilde</creator><creator>Grützmacher, Detlev</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201203</creationdate><title>Morphology evolution and optical properties of GaN nano-pyramids grown by selective area MOVPE</title><author>Winden, Andreas ; Mikulics, Martin ; Haab, Anna ; Stoica, Toma ; von der Ahe, Martina ; Wirtz, Konrad ; Hardtdegen, Hilde ; Grützmacher, Detlev</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3931-3997ba0a5ad3b63f1742c233a847d0e31496a91fd3822efc3f1d4f5537fc38153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>GaN</topic><topic>micro-photoluminescence</topic><topic>MOVPE</topic><topic>nano-pyramids</topic><topic>selective area growth</topic><topic>strain</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Winden, Andreas</creatorcontrib><creatorcontrib>Mikulics, Martin</creatorcontrib><creatorcontrib>Haab, Anna</creatorcontrib><creatorcontrib>Stoica, Toma</creatorcontrib><creatorcontrib>von der Ahe, Martina</creatorcontrib><creatorcontrib>Wirtz, Konrad</creatorcontrib><creatorcontrib>Hardtdegen, Hilde</creatorcontrib><creatorcontrib>Grützmacher, Detlev</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>Physica status solidi. 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| issn | 1862-6351 1610-1642 |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_pssc_201100411 |
| source | Wiley Online Library Journals Frontfile Complete |
| subjects | GaN micro-photoluminescence MOVPE nano-pyramids selective area growth strain |
| title | Morphology evolution and optical properties of GaN nano-pyramids grown by selective area MOVPE |
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