Influence of growth temperature on the twin formation of InN{10$ bar 1 $3} on GaAs(110) by metalorganic vapor phase epitaxy

Twin formation of {10$ \bar 1 $3} semi‐polar InN layers on GaAs(110) surface has been investigated by metalorganic vapor phase epitaxy (MOVPE). It was found that the growth temperature of InN epitaxial layer strongly affected the twin formation due to the difference in the durability of In‐polar and...

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Veröffentlicht in:	Physica status solidi. C 2012-03, Vol.9 (3-4), p.677-680
Hauptverfasser:	Murakami, Hisashi, Cho, Hyun-Chol, Suematsu, Mayu, Inaba, Katsuhiko, Kumagai, Yoshinao, Koukitu, Akinori
Format:	Artikel
Sprache:	eng
Schlagworte:	anomalous atomic dispersion InN MOVPE X-ray diffraction
Online-Zugang:	Volltext
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