Influence of growth temperature on the twin formation of InN{10$ bar 1 $3} on GaAs(110) by metalorganic vapor phase epitaxy

Twin formation of {10$ \bar 1 $3} semi‐polar InN layers on GaAs(110) surface has been investigated by metalorganic vapor phase epitaxy (MOVPE). It was found that the growth temperature of InN epitaxial layer strongly affected the twin formation due to the difference in the durability of In‐polar and N‐polar InN crystal at each growth temperature. From the results of polarity determination and pole figure measurements by high resolution X‐ray diffraction (HR‐XRD), InN layers grown at high temperatures showed a single domain (no twinning) and the direction of 〈0001〉 InN paralleled to the direction of 〈11$ \bar 1 $〉B GaAs, implying the epitaxial relationship to be (10$ \bar 1 $$ \bar 3 $)//GaAs(110). On the contrary, InN layers grown at relatively low temperatures contained the twin crystal and the [0001] InN of each domain paralleled to either 〈111〉A or 〈11$ \bar 1 $〉B of GaAs. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)