Study on photoemission mechanism for negative electron affinity GaN vacuum electron source

The whole process including photoelectron excitation, transportation from bulk to surface and escape to vacuum by traversing surface barrier was analyzed in detail. Photoelectron excitation relates to the band structure of photocathode material and the absorption coefficient of the material. In the...

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Veröffentlicht in:	Physica status solidi. C 2012-01, Vol.9 (1), p.36-40
Hauptverfasser:	Qiao, Jianliang, Chang, Benkang, Qian, Yunsheng, Wang, Xiaohui, Li, Biao, Fu, Xiaoqian
Format:	Artikel
Sprache:	eng
Schlagworte:	GaN negative electron affinity transmission coefficient vacuum electron source
Online-Zugang:	Volltext
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