GaN-on-Si HEMT stress under high electric field condition

Nowadays, GaN‐on‐Si HEMTs (High Electron Mobility transistors) are receiving a lot of attention thanks to their impressive performance in terms of high current and voltage capabilities combined with a low production cost. Since the technology has matured, the reliability aspects have been initially...

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Veröffentlicht in:	Physica status solidi. C 2009-06, Vol.6 (S2), p.S1024-S1028
Hauptverfasser:	Marcon, Denis, Lorenz, Anne, Derluyn, Joff, Das, Jo, Medjdoub, Farid, Cheng, Kai, Degroote, Stefan, Leys, Maarten, Mertens, Robert, Germain, Marianne, Borghs, Gustaaf
Format:	Artikel
Sprache:	eng
Schlagworte:	73.40.Kp 73.50.Fq 81.05.Ea 81.15.Kk 85.30.Tv
Online-Zugang:	Volltext
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