Characterizations of Subbandgap Optical Absorption in Undoped‐GaN and 90 nm‐Thick Al 1− x In x N Thin Film on Sapphire Substrates Grown by Metal–Organic Chemical Vapor Deposition

Subbandgap optical absorption (SOA) in undoped GaN and 90 nm‐thick Al 1− x In x N thin films grown on sapphire substrates is investigated using photothermal deflection spectroscopy (PDS) and photoluminescence (PL). An Al 1− x In x N alloy ( x  = 0.17) is grown on a GaN/sapphire template by metal–org...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	physica status solidi (b) 2024-11, Vol.261 (11)
Hauptverfasser:	Noda, Kouki, Murakami, Yuto, Toyoda, Hayata, Shibata, Kana, Tsukada, Youna, Imai, Daichi, Takeuchi, Tetsuya, Miyoshi, Makoto, Miyajima, Takao
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!