Optimization of In‐Reactor In Situ Activation Annealing Conditions for Tunnel Junction Layers in Multiquantum Shell GaN‐Based Devices

For realizing room‐temperature continuous‐wave operation in core–shell GaN nanowire‐based semiconductor lasers, certain device characteristics are required, namely, a low threshold current and low operating voltage. To reduce the operating voltage and inject current into the m‐plane multiquantum she...

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Veröffentlicht in:	physica status solidi (b) 2024-11, Vol.261 (11), p.n/a
Hauptverfasser:	Takahashi, Mizuki, Yamanaka, Yuki, Ii, Shiori, Shima, Ayaka, Inaba, Soma, Kubota, Kosei, Hattori, Yuta, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi
Format:	Artikel
Sprache:	eng
Schlagworte:	activation annealing GaInN/GaN laser diode multiquantum shells nanowires tunnel junctions
Online-Zugang:	Volltext
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