Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties

Total energy and electronic structure calculations based on density functional theory are performed in order to determine the atomic structure and electronic properties of clean and hydrogen‐adsorbed Al0.5In0.5P(001) surfaces. It is found that most of the stable surfaces obey the electron‐counting rule and are characterized by surface atom dimerization. The dimer‐related surface states are predicted to occur in the vicinity of the bulk band edges. For a very narrow range of preparation conditions, ab initio thermodynamics predicts metal atomic wires formed by surface cations. A surface covered with a monolayer of buckled phosphorus dimers, where half of the phosphorus atoms are hydrogen saturated, is found to be stable for metal–organic vapor‐phase epitaxy growth conditions. The occurrence of this structure is confirmed by low‐energy electron diffraction and X‐ray photoelectron spectroscopy data measured on epitaxially grown Al0.52In0.48P(001) epilayers lattice matched to GaAs. The microscopic structure and electronic properties of AlInP(001) surfaces are explored. Surfaces grown by metal–organic vapor‐phase epitaxy are covered with a monolayer of buckled phosphorus dimers, where half of the phosphorus atoms are hydrogen saturated. Depending on the surface preparation conditions, further semiconducting dimer structures as well as metal atomic wires may form.