Monolayer NbNSe with High Fermi Velocity and Anisotropic Properties

2D materials with high carrier mobility and anisotropy have attracted extensive research interest. The single‐layer NbNSe has anisotropic elasticity, and the Young's modulus is up to 106 N m−1. The Fermi velocity is as high as 3.5 × 105 m s−1, and the transition between semiconductor and metallic states can be achieved by applying a uniaxial tensile strain of 2%. In addition, anisotropic electron transport properties indicate that currents along the b direction can reach 12.4 μA under a bias voltage of 2.0 V. These findings provide a physical basis for the design and synthesis of a new 2D material. The single‐layer NbNSe has anisotropic elasticity, and the Young's modulus is up to 106 N m−1. The Fermi velocity is as high as 3.5 × 105 m s−1. The transition between semiconductor and metallic states can be achieved by applying strain. With a bias voltage of 2.0 V, the current in the b direction can reach 12.4 μA.