Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy

GaN‐based optoelectronic devices including light‐emitting diodes and lasers realized with quantum‐confined nanostructures, revolutionized the solid‐state lighting. Excited‐state ultrafast nonlinear dynamics of these nanostructures are crucial in determining the device performance in terms of lumines...

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Veröffentlicht in:	physica status solidi (b) 2021-10, Vol.258 (10), p.n/a
Hauptverfasser:	Aggarwal, Tarni, Udai, Ankit, Banerjee, Debashree, Pendem, Vikas, Chouksey, Shonal, Saha, Pratim, Sankaranarayanan, Sandeep, Ganguly, Swaroop, Bhattacharya, Pallab, Saha, Dipankar
Format:	Artikel
Sprache:	eng
Schlagworte:	carrier dynamics InGaN/GaN nanostructures pump–probe spectroscopy transient absorption spectroscopy
Online-Zugang:	Volltext
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