Suppression of Iron Memory Effect in GaN Epitaxial Layers

AlGaN/GaN High Electron Mobility Transistors (HEMTs) require a semi‐insulating buffer to compensate a high background donor concentration and to prevent parasitic effects, such as parallel conduction. Iron and carbon are typical impurities used for such purpose, since they can behave as deep accepto...

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Veröffentlicht in:	physica status solidi (b) 2018-05, Vol.255 (5), p.n/a
Hauptverfasser:	Leone, Stefano, Benkhelifa, Fouad, Kirste, Lutz, Manz, Christian, Mueller, Stefan, Quay, Ruediger, Stadelmann, Tim
Format:	Artikel
Sprache:	eng
Schlagworte:	chemical vapor deposition doping GaN high electron mobility transistors iron memory effect
Online-Zugang:	Volltext
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