Electron g‐factor fluctuations in highly n‐doped GaAs at high temperatures detected by ultrafast spin noise spectroscopy

Recent spin noise spectroscopy measurements showed at low temperatures unexpected large g‐factor fluctuations in highly n‐doped bulk GaAs which were attributed to intrinsic g‐factor fluctuations due to the stochastic nature of the doping distribution. In this publication, we extend these low tempera...

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Veröffentlicht in:	physica status solidi (b) 2017-05, Vol.254 (5), p.n/a
Hauptverfasser:	Kuhn, Hendrik, Lonnemann, Jan Gerrit, Berski, Fabian, Hübner, Jens, Oestreich, Michael
Format:	Artikel
Sprache:	eng
Schlagworte:	bulk‐GaAs G‐factor high n‐doping semiconductors spin dynamics spin noise spectroscopy
Online-Zugang:	Volltext
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