Permanent deactivation of boron-oxygen recombination centres in silicon: Permanent deactivation of B-O recombination centres in Si

Permanent deactivation of boron-oxygen recombination centres in silicon: Permanent deactivation of B-O recombination centres in Si

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Veröffentlicht in:physica status solidi (b) 2016-09, Vol.253 (9), p.1721-1728
Hauptverfasser: Voronkov, Vladimir, Falster, Robert
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container_title physica status solidi (b)
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creator Voronkov, Vladimir
Falster, Robert
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doi_str_mv 10.1002/pssb.201600082
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title Permanent deactivation of boron-oxygen recombination centres in silicon: Permanent deactivation of B-O recombination centres in Si
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