Critical scattering in the vicinity of the metal-insulator transition in Mn-doped GaAs
We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn‐doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal–insulator transition and the critical scat...
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| Veröffentlicht in: | physica status solidi (b) 2012-04, Vol.249 (4), p.834-839 |
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| creator | Varpula, A. Novikov, S. Kuivalainen, P. |
| description | We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn‐doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal–insulator transition and the critical scattering due to the exchange interaction between the charge carrier spins and the localized magnetic moments. The model is based on Kubo–Greenwood formalism and the scaling theory of localization. The contribution from the critical scattering is calculated using the Green's function technique and the self‐consistent Born approximation. The model explains well the measured resistivity in Mn‐doped GaAs as a function of temperature, doping concentration, and magnetic field. |
| doi_str_mv | 10.1002/pssb.201147460 |
| format | Article |
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The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal–insulator transition and the critical scattering due to the exchange interaction between the charge carrier spins and the localized magnetic moments. The model is based on Kubo–Greenwood formalism and the scaling theory of localization. The contribution from the critical scattering is calculated using the Green's function technique and the self‐consistent Born approximation. The model explains well the measured resistivity in Mn‐doped GaAs as a function of temperature, doping concentration, and magnetic field.</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.201147460</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>critical scattering ; magnetic semiconductors ; spintronics ; transport theory</subject><ispartof>physica status solidi (b), 2012-04, Vol.249 (4), p.834-839</ispartof><rights>Copyright © 2012 WILEY‐VCH Verlag GmbH & Co. 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Status Solidi B</addtitle><description>We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn‐doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal–insulator transition and the critical scattering due to the exchange interaction between the charge carrier spins and the localized magnetic moments. The model is based on Kubo–Greenwood formalism and the scaling theory of localization. The contribution from the critical scattering is calculated using the Green's function technique and the self‐consistent Born approximation. The model explains well the measured resistivity in Mn‐doped GaAs as a function of temperature, doping concentration, and magnetic field.</description><subject>critical scattering</subject><subject>magnetic semiconductors</subject><subject>spintronics</subject><subject>transport theory</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqF0MtOwzAQBVALgUQpbFnnB1w8cRLHy7aCQFUKUktZWq4fYEiTyjaP_j0pRYgdq9FIc65GF6FzIAMgJL3YhLAapAQgY1lBDlAP8hQw5Tkcoh6hjGDgLD1GJyG8EEIYUOih5di76JSsk6BkjMa75ilxTRKfTfLulGtc3Cat_d7XJsoauya81TK2PoleNqHTbbMTtw3W7cbopJLDcIqOrKyDOfuZffRwdbkYX-PpXXUzHk6xot3P2DLLuc2UApJpTrKcQcrTUmtKVK51SfICjMkKXeqygFWZZyAt4abThto8pX002Ocq34bgjRUb79bSbwUQsWtF7FoRv610gO_Bh6vN9p9rcT-fj_5avLcuRPP5a6V_FQWjLBePs0osZpOKjyZLMaVfpql2Vw</recordid><startdate>201204</startdate><enddate>201204</enddate><creator>Varpula, A.</creator><creator>Novikov, S.</creator><creator>Kuivalainen, P.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201204</creationdate><title>Critical scattering in the vicinity of the metal-insulator transition in Mn-doped GaAs</title><author>Varpula, A. ; Novikov, S. ; Kuivalainen, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3100-f7f99f4cc104d9045712928dd30c5dd80561ee46d8d861b8541af09ec31e3f523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>critical scattering</topic><topic>magnetic semiconductors</topic><topic>spintronics</topic><topic>transport theory</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Varpula, A.</creatorcontrib><creatorcontrib>Novikov, S.</creatorcontrib><creatorcontrib>Kuivalainen, P.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>physica status solidi (b)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Varpula, A.</au><au>Novikov, S.</au><au>Kuivalainen, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Critical scattering in the vicinity of the metal-insulator transition in Mn-doped GaAs</atitle><jtitle>physica status solidi (b)</jtitle><addtitle>Phys. Status Solidi B</addtitle><date>2012-04</date><risdate>2012</risdate><volume>249</volume><issue>4</issue><spage>834</spage><epage>839</epage><pages>834-839</pages><issn>0370-1972</issn><eissn>1521-3951</eissn><abstract>We have developed an improved model for describing the electrical transport properties of diluted ferromagnetic semiconductors such as Mn‐doped GaAs. The model takes into account transport mechanisms in disordered semiconductors in the vicinity of the metal–insulator transition and the critical scattering due to the exchange interaction between the charge carrier spins and the localized magnetic moments. The model is based on Kubo–Greenwood formalism and the scaling theory of localization. The contribution from the critical scattering is calculated using the Green's function technique and the self‐consistent Born approximation. The model explains well the measured resistivity in Mn‐doped GaAs as a function of temperature, doping concentration, and magnetic field.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssb.201147460</doi><tpages>6</tpages></addata></record> |
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| subjects | critical scattering magnetic semiconductors spintronics transport theory |
| title | Critical scattering in the vicinity of the metal-insulator transition in Mn-doped GaAs |
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