A conductivity-based selective etching for next generation GaN devices

Electrochemical etching having large selectivity based on the conductivity of n‐type GaN was investigated to demonstrate the feasibility of novel optical and microelectromechanical system devices. The electrochemical etching exhibited two regimes with different etching characteristics, i.e., nanopor...

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Veröffentlicht in:	Physica status solidi. B. Basic research 2010-07, Vol.247 (7), p.1713-1716
Hauptverfasser:	Zhang, Yu, Ryu, Sang-Wan, Yerino, Chris, Leung, Benjamin, Sun, Qian, Song, Qinghai, Cao, Hui, Han, Jung
Format:	Artikel
Sprache:	eng
Schlagworte:	conductivity Cross-disciplinary physics: materials science rheology electrochemical etching Exact sciences and technology III-V semiconductors Materials science microelectromechanical devices Physics Surface treatments
Online-Zugang:	Volltext
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