Growth characteristics of single-crystalline ZnMgO layers by ultrasonic spray assisted mist CVD technique
A simple, safe, and cost‐effective ultrasonic spray assisted mist chemical vapor deposition (CVD) method has been applied for the growth of Zn1−xMgxO alloy thin films on a‐plane sapphire substrates with ZnO buffer layers. Single‐crystalline (0001)‐oriented wurtzite Zn1−xMgxO thin films have been pre...
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| Veröffentlicht in: | Physica status solidi. B. Basic research 2010-06, Vol.247 (6), p.1460-1463 |
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| container_title | Physica status solidi. B. Basic research |
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| creator | Nishinaka, Hiroyuki Kamada, Yudai Kameyama, Naoki Fujita, Shizuo |
| description | A simple, safe, and cost‐effective ultrasonic spray assisted mist chemical vapor deposition (CVD) method has been applied for the growth of Zn1−xMgxO alloy thin films on a‐plane sapphire substrates with ZnO buffer layers. Single‐crystalline (0001)‐oriented wurtzite Zn1−xMgxO thin films have been prepared for x of between x = 0 and 0.25. The optical bandgap can be tuned from 3.28 to 3.96 eV with a pure wurtzite phase (x = 0–0.25). At x = 0.31 slight segregation of rocksalt ZnMgO was seen in wurtzite ZnMgO, but the bandgap was as large as 4.10 eV. Zn1−xMgxO alloys exhibited room temperature ultraviolet cathode luminescence (CL) at energies between 3.28 (x = 0) and 4.04 eV (x = 0.31) without no observable deep level emissions. This novel growth technique can contribute to evolution of various oxide thin films of unique functions. |
| doi_str_mv | 10.1002/pssb.200983247 |
| format | Article |
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Single‐crystalline (0001)‐oriented wurtzite Zn1−xMgxO thin films have been prepared for x of between x = 0 and 0.25. The optical bandgap can be tuned from 3.28 to 3.96 eV with a pure wurtzite phase (x = 0–0.25). At x = 0.31 slight segregation of rocksalt ZnMgO was seen in wurtzite ZnMgO, but the bandgap was as large as 4.10 eV. Zn1−xMgxO alloys exhibited room temperature ultraviolet cathode luminescence (CL) at energies between 3.28 (x = 0) and 4.04 eV (x = 0.31) without no observable deep level emissions. 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KGaA, Weinheim</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4677-77ae0abbb1037fc2c4815eaeab114a1b9818d8aa41a6955e2e34443bbc0985c83</citedby><cites>FETCH-LOGICAL-c4677-77ae0abbb1037fc2c4815eaeab114a1b9818d8aa41a6955e2e34443bbc0985c83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssb.200983247$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssb.200983247$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>315,781,785,1418,27929,27930,45579,45580</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22884469$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Nishinaka, Hiroyuki</creatorcontrib><creatorcontrib>Kamada, Yudai</creatorcontrib><creatorcontrib>Kameyama, Naoki</creatorcontrib><creatorcontrib>Fujita, Shizuo</creatorcontrib><title>Growth characteristics of single-crystalline ZnMgO layers by ultrasonic spray assisted mist CVD technique</title><title>Physica status solidi. B. Basic research</title><addtitle>phys. stat. sol. (b)</addtitle><description>A simple, safe, and cost‐effective ultrasonic spray assisted mist chemical vapor deposition (CVD) method has been applied for the growth of Zn1−xMgxO alloy thin films on a‐plane sapphire substrates with ZnO buffer layers. Single‐crystalline (0001)‐oriented wurtzite Zn1−xMgxO thin films have been prepared for x of between x = 0 and 0.25. The optical bandgap can be tuned from 3.28 to 3.96 eV with a pure wurtzite phase (x = 0–0.25). At x = 0.31 slight segregation of rocksalt ZnMgO was seen in wurtzite ZnMgO, but the bandgap was as large as 4.10 eV. Zn1−xMgxO alloys exhibited room temperature ultraviolet cathode luminescence (CL) at energies between 3.28 (x = 0) and 4.04 eV (x = 0.31) without no observable deep level emissions. This novel growth technique can contribute to evolution of various oxide thin films of unique functions.</description><subject>chemical vapor deposition</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>II-VI semiconductors</subject><subject>magnetic semiconductors</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAQhi0EEqWwMnthTPFX4mSEAgXxUSQ-xWKdjdMaQlp8QSX_nlRFFRvTLe_z3t1DyD5nA86YOJwj2oFgrMilUHqD9HgqeCKLlG-SHpOaJbzQYpvsIL4xxjSXvEfCKM4WzZS6KURwjY8Bm-CQzkqKoZ5UPnGxxQaqKtSevtTXkzGtoPURqW3pV9VEwFkdHMV5hJYCYlfgX-lHN-jw8YQ23k3r8Pnld8lWCRX6vd_ZJw9np_fD8-RqPLoYHl0lTmVaJ1qDZ2Ct5d3JpRNO5Tz14MFyroDbIuf5aw6gOGRFmnrhpVJKWuu6x1OXyz4ZrHpdnCFGX5p5DB8QW8OZWYoyS1FmLaoDDlbAHNBBVUaoXcA1JUSeK5UVXa5Y5Rah8u0_reb27u74745kxS7tfK9ZiO8m01Kn5ulmZO6fs-fLobw1L_IHV9SL6A</recordid><startdate>201006</startdate><enddate>201006</enddate><creator>Nishinaka, Hiroyuki</creator><creator>Kamada, Yudai</creator><creator>Kameyama, Naoki</creator><creator>Fujita, Shizuo</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201006</creationdate><title>Growth characteristics of single-crystalline ZnMgO layers by ultrasonic spray assisted mist CVD technique</title><author>Nishinaka, Hiroyuki ; Kamada, Yudai ; Kameyama, Naoki ; Fujita, Shizuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4677-77ae0abbb1037fc2c4815eaeab114a1b9818d8aa41a6955e2e34443bbc0985c83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>chemical vapor deposition</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>II-VI semiconductors</topic><topic>magnetic semiconductors</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nishinaka, Hiroyuki</creatorcontrib><creatorcontrib>Kamada, Yudai</creatorcontrib><creatorcontrib>Kameyama, Naoki</creatorcontrib><creatorcontrib>Fujita, Shizuo</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Physica status solidi. B. Basic research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nishinaka, Hiroyuki</au><au>Kamada, Yudai</au><au>Kameyama, Naoki</au><au>Fujita, Shizuo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth characteristics of single-crystalline ZnMgO layers by ultrasonic spray assisted mist CVD technique</atitle><jtitle>Physica status solidi. B. Basic research</jtitle><addtitle>phys. stat. sol. (b)</addtitle><date>2010-06</date><risdate>2010</risdate><volume>247</volume><issue>6</issue><spage>1460</spage><epage>1463</epage><pages>1460-1463</pages><issn>0370-1972</issn><eissn>1521-3951</eissn><coden>PSSBBD</coden><abstract>A simple, safe, and cost‐effective ultrasonic spray assisted mist chemical vapor deposition (CVD) method has been applied for the growth of Zn1−xMgxO alloy thin films on a‐plane sapphire substrates with ZnO buffer layers. Single‐crystalline (0001)‐oriented wurtzite Zn1−xMgxO thin films have been prepared for x of between x = 0 and 0.25. The optical bandgap can be tuned from 3.28 to 3.96 eV with a pure wurtzite phase (x = 0–0.25). At x = 0.31 slight segregation of rocksalt ZnMgO was seen in wurtzite ZnMgO, but the bandgap was as large as 4.10 eV. Zn1−xMgxO alloys exhibited room temperature ultraviolet cathode luminescence (CL) at energies between 3.28 (x = 0) and 4.04 eV (x = 0.31) without no observable deep level emissions. This novel growth technique can contribute to evolution of various oxide thin films of unique functions.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssb.200983247</doi><tpages>4</tpages></addata></record> |
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| subjects | chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology II-VI semiconductors magnetic semiconductors Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics |
| title | Growth characteristics of single-crystalline ZnMgO layers by ultrasonic spray assisted mist CVD technique |
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