Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique

This paper surveys extended defects in 4H‐SiC epilayers and reports recent results concerning fast epitaxial growth. Synchrotron X‐ray topography, transmission electron microscopy, Nomarski optical microscopy and defect selective etching analysis are applied to investigate the nucleation and propaga...

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Veröffentlicht in:	Physica status solidi. B. Basic research 2009-07, Vol.246 (7), p.1553-1568
Hauptverfasser:	Tsuchida, Hidekazu, Ito, Masahiko, Kamata, Isaho, Nagano, Masahiro
Format:	Artikel
Sprache:	eng
Schlagworte:	61.72.Ff 81.05.Hd 81.15.Kk Condensed matter: structure, mechanical and thermal properties Defects and impurities: doping, implantation, distribution, concentration, etc Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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