H‐ and D‐related mid‐infrared absorption bands in Ga 1– y In y As 1– x N x epitaxial layers
Epitaxially grown ternary and quaternary layers of GaAs based dilute nitrides have been exposed to H + and D + ion bombardment to investigate the interaction between hydrogen (deuterium) and nitrogen. Low‐temperature Fourier transform infrared absorption measurements reveal the formation of N–H (N–D...
Gespeichert in:
| Veröffentlicht in: | physica status solidi (b) 2009-01, Vol.246 (1), p.200-205 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 205 |
|---|---|
| container_issue | 1 |
| container_start_page | 200 |
| container_title | physica status solidi (b) |
| container_volume | 246 |
| creator | Alt, Hans Christian Messerer, Peter Köhler, Klaus Riechert, Henning |
| description | Epitaxially grown ternary and quaternary layers of GaAs based dilute nitrides have been exposed to H
+
and D
+
ion bombardment to investigate the interaction between hydrogen (deuterium) and nitrogen. Low‐temperature Fourier transform infrared absorption measurements reveal the formation of N–H (N–D) complexes by the appearance of high‐frequency absorption bands in the mid‐infrared due to vibrational modes of H(D). In thin layers, the transformation of isolated substi‐ tutional nitrogen, N
As
, into complexes involving H (D) is complete, in thick (500–1000 nm) layers only partial. Analyses of the band intensities dependent on variations of the sample structure and parameters during ion irradiation challenge the model of a unique defect associated with the observed vibrational modes. A new model is proposed based on two different N–H (N–D) centers, each involving one H (D) atom. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssb.200844270 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1002_pssb_200844270</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1002_pssb_200844270</sourcerecordid><originalsourceid>FETCH-LOGICAL-c840-60563ad26e9ae283b39eb74acaaea3852628cb5122ecdaa8dae68dcd0bc66c223</originalsourceid><addsrcrecordid>eNo9kMtKw0AUhgdRMFa3rucFUs-cSSaTZanaFopuug9nLoWRNAkzXbS7PoLgG_ZJTKm4OJcPfv7Fx9izgKkAwJchJTNFAF0UWMENy0SJIpd1KW5ZBrKCXNQV3rOHlL4AoBJSZMwvz6dvTp3jr-MTfUt77_guuJFCt40URyST-jjsQ99xM0YTDx1fEBfn0w8_8lU3rlm64oF_jOOHsKdDoJa3dPQxPbK7LbXJP_3dCdu8v23my3z9uVjNZ-vc6gJyBaWS5FD5mjxqaWTtTVWQJfIkdYkKtTWlQPTWEWlHXmlnHRirlEWUEza91trYpxT9thli2FE8NgKai6Pm4qj5dyR_AWWjXpA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>H‐ and D‐related mid‐infrared absorption bands in Ga 1– y In y As 1– x N x epitaxial layers</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Alt, Hans Christian ; Messerer, Peter ; Köhler, Klaus ; Riechert, Henning</creator><creatorcontrib>Alt, Hans Christian ; Messerer, Peter ; Köhler, Klaus ; Riechert, Henning</creatorcontrib><description>Epitaxially grown ternary and quaternary layers of GaAs based dilute nitrides have been exposed to H
+
and D
+
ion bombardment to investigate the interaction between hydrogen (deuterium) and nitrogen. Low‐temperature Fourier transform infrared absorption measurements reveal the formation of N–H (N–D) complexes by the appearance of high‐frequency absorption bands in the mid‐infrared due to vibrational modes of H(D). In thin layers, the transformation of isolated substi‐ tutional nitrogen, N
As
, into complexes involving H (D) is complete, in thick (500–1000 nm) layers only partial. Analyses of the band intensities dependent on variations of the sample structure and parameters during ion irradiation challenge the model of a unique defect associated with the observed vibrational modes. A new model is proposed based on two different N–H (N–D) centers, each involving one H (D) atom. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.200844270</identifier><language>eng</language><ispartof>physica status solidi (b), 2009-01, Vol.246 (1), p.200-205</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c840-60563ad26e9ae283b39eb74acaaea3852628cb5122ecdaa8dae68dcd0bc66c223</citedby><cites>FETCH-LOGICAL-c840-60563ad26e9ae283b39eb74acaaea3852628cb5122ecdaa8dae68dcd0bc66c223</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Alt, Hans Christian</creatorcontrib><creatorcontrib>Messerer, Peter</creatorcontrib><creatorcontrib>Köhler, Klaus</creatorcontrib><creatorcontrib>Riechert, Henning</creatorcontrib><title>H‐ and D‐related mid‐infrared absorption bands in Ga 1– y In y As 1– x N x epitaxial layers</title><title>physica status solidi (b)</title><description>Epitaxially grown ternary and quaternary layers of GaAs based dilute nitrides have been exposed to H
+
and D
+
ion bombardment to investigate the interaction between hydrogen (deuterium) and nitrogen. Low‐temperature Fourier transform infrared absorption measurements reveal the formation of N–H (N–D) complexes by the appearance of high‐frequency absorption bands in the mid‐infrared due to vibrational modes of H(D). In thin layers, the transformation of isolated substi‐ tutional nitrogen, N
As
, into complexes involving H (D) is complete, in thick (500–1000 nm) layers only partial. Analyses of the band intensities dependent on variations of the sample structure and parameters during ion irradiation challenge the model of a unique defect associated with the observed vibrational modes. A new model is proposed based on two different N–H (N–D) centers, each involving one H (D) atom. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNo9kMtKw0AUhgdRMFa3rucFUs-cSSaTZanaFopuug9nLoWRNAkzXbS7PoLgG_ZJTKm4OJcPfv7Fx9izgKkAwJchJTNFAF0UWMENy0SJIpd1KW5ZBrKCXNQV3rOHlL4AoBJSZMwvz6dvTp3jr-MTfUt77_guuJFCt40URyST-jjsQ99xM0YTDx1fEBfn0w8_8lU3rlm64oF_jOOHsKdDoJa3dPQxPbK7LbXJP_3dCdu8v23my3z9uVjNZ-vc6gJyBaWS5FD5mjxqaWTtTVWQJfIkdYkKtTWlQPTWEWlHXmlnHRirlEWUEza91trYpxT9thli2FE8NgKai6Pm4qj5dyR_AWWjXpA</recordid><startdate>200901</startdate><enddate>200901</enddate><creator>Alt, Hans Christian</creator><creator>Messerer, Peter</creator><creator>Köhler, Klaus</creator><creator>Riechert, Henning</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200901</creationdate><title>H‐ and D‐related mid‐infrared absorption bands in Ga 1– y In y As 1– x N x epitaxial layers</title><author>Alt, Hans Christian ; Messerer, Peter ; Köhler, Klaus ; Riechert, Henning</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c840-60563ad26e9ae283b39eb74acaaea3852628cb5122ecdaa8dae68dcd0bc66c223</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alt, Hans Christian</creatorcontrib><creatorcontrib>Messerer, Peter</creatorcontrib><creatorcontrib>Köhler, Klaus</creatorcontrib><creatorcontrib>Riechert, Henning</creatorcontrib><collection>CrossRef</collection><jtitle>physica status solidi (b)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alt, Hans Christian</au><au>Messerer, Peter</au><au>Köhler, Klaus</au><au>Riechert, Henning</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>H‐ and D‐related mid‐infrared absorption bands in Ga 1– y In y As 1– x N x epitaxial layers</atitle><jtitle>physica status solidi (b)</jtitle><date>2009-01</date><risdate>2009</risdate><volume>246</volume><issue>1</issue><spage>200</spage><epage>205</epage><pages>200-205</pages><issn>0370-1972</issn><eissn>1521-3951</eissn><abstract>Epitaxially grown ternary and quaternary layers of GaAs based dilute nitrides have been exposed to H
+
and D
+
ion bombardment to investigate the interaction between hydrogen (deuterium) and nitrogen. Low‐temperature Fourier transform infrared absorption measurements reveal the formation of N–H (N–D) complexes by the appearance of high‐frequency absorption bands in the mid‐infrared due to vibrational modes of H(D). In thin layers, the transformation of isolated substi‐ tutional nitrogen, N
As
, into complexes involving H (D) is complete, in thick (500–1000 nm) layers only partial. Analyses of the band intensities dependent on variations of the sample structure and parameters during ion irradiation challenge the model of a unique defect associated with the observed vibrational modes. A new model is proposed based on two different N–H (N–D) centers, each involving one H (D) atom. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><doi>10.1002/pssb.200844270</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0370-1972 |
| ispartof | physica status solidi (b), 2009-01, Vol.246 (1), p.200-205 |
| issn | 0370-1972 1521-3951 |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_pssb_200844270 |
| source | Wiley Online Library Journals Frontfile Complete |
| title | H‐ and D‐related mid‐infrared absorption bands in Ga 1– y In y As 1– x N x epitaxial layers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T01%3A08%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=H%E2%80%90%20and%20D%E2%80%90related%20mid%E2%80%90infrared%20absorption%20bands%20in%20Ga%201%E2%80%93%20y%20In%20y%20As%201%E2%80%93%20x%20N%20x%20epitaxial%20layers&rft.jtitle=physica%20status%20solidi%20(b)&rft.au=Alt,%20Hans%20Christian&rft.date=2009-01&rft.volume=246&rft.issue=1&rft.spage=200&rft.epage=205&rft.pages=200-205&rft.issn=0370-1972&rft.eissn=1521-3951&rft_id=info:doi/10.1002/pssb.200844270&rft_dat=%3Ccrossref%3E10_1002_pssb_200844270%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |