Coupling of large optical loss with Auger recombination in 1.3 μm InGaAsP lasers investigated using hydrostatic pressure

InGaAsP lasers with different losses have been investigated under hydrostatic pressure at room temperature. It is shown that, for large loss devices, the threshold current decreases more rapidly with increasing pressure than the expected variation of the typical direct band‐to‐band Auger recombinati...

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Veröffentlicht in:	Physica status solidi. B. Basic research 2003-02, Vol.235 (2), p.547-551
Hauptverfasser:	Jin, S. R., Sweeney, S. J., Adams, A. R., Thijs, P. J. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	42.55.Px 73.21.Fg 73.50.Gr 73.61.Ey 78.60.Fi Charge carriers: generation, recombination, lifetime, trapping, mean free paths Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrical properties of specific thin films Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Fundamental areas of phenomenology (including applications) Iii-v semiconductors Lasers Optics Physics Quantum wells Semiconductor lasers laser diodes
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