Cathodoluminescence studies of thermally oxidized cleaved surfaces of gallium selenide layered crystals
Oxide layer formation on cleaved gallium monoselenide layer crystal surfaces during thermal oxidation in air have been studied by the cathodoluminescence (CL) method. GaSe surface heat treatment at temperatures up to 400 °C creates a significant decrease of CL intensity in the free exiton recombinat...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1996-07, Vol.156 (1), p.113-118 |
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| container_title | Physica status solidi. A, Applied research |
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| creator | Savchyn, V. P. Stakhira, J. M. |
| description | Oxide layer formation on cleaved gallium monoselenide layer crystal surfaces during thermal oxidation in air have been studied by the cathodoluminescence (CL) method. GaSe surface heat treatment at temperatures up to 400 °C creates a significant decrease of CL intensity in the free exiton recombination band without any changes in the spectral structure. This is caused by an increase of the nonradiative surface recombination rate. During the thermal oxidation of GaSe cleaved surfaces at 400 °C < T < 600 °C the process of defect creation at the interface to the original structure takes place at first. The defect creation is accompanied by Ga2Se3 phase creation (at T > 450 °C). The main maximum of the CL band of this phase is at 1.45 eV. The β‐Ga2O3 phase creation, which is identified according to its typical CL spectrum, takes place at T ≥ 600 °C. The CL intensity in this spectral part increases sharply and its maximum shifts from 3.10 to 3.45 eV with increasing oxidation time and temperature. |
| doi_str_mv | 10.1002/pssa.2211560115 |
| format | Article |
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The CL intensity in this spectral part increases sharply and its maximum shifts from 3.10 to 3.45 eV with increasing oxidation time and temperature.</description><identifier>ISSN: 0031-8965</identifier><identifier>EISSN: 1521-396X</identifier><identifier>DOI: 10.1002/pssa.2211560115</identifier><identifier>CODEN: PSSABA</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Cathodoluminescence, ionoluminescence ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Other luminescence and radiative recombination ; Oxidation ; Physics ; Surface treatments</subject><ispartof>Physica status solidi. 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M.</creatorcontrib><title>Cathodoluminescence studies of thermally oxidized cleaved surfaces of gallium selenide layered crystals</title><title>Physica status solidi. A, Applied research</title><addtitle>phys. stat. sol. (a)</addtitle><description>Oxide layer formation on cleaved gallium monoselenide layer crystal surfaces during thermal oxidation in air have been studied by the cathodoluminescence (CL) method. GaSe surface heat treatment at temperatures up to 400 °C creates a significant decrease of CL intensity in the free exiton recombination band without any changes in the spectral structure. This is caused by an increase of the nonradiative surface recombination rate. During the thermal oxidation of GaSe cleaved surfaces at 400 °C < T < 600 °C the process of defect creation at the interface to the original structure takes place at first. The defect creation is accompanied by Ga2Se3 phase creation (at T > 450 °C). The main maximum of the CL band of this phase is at 1.45 eV. The β‐Ga2O3 phase creation, which is identified according to its typical CL spectrum, takes place at T ≥ 600 °C. The CL intensity in this spectral part increases sharply and its maximum shifts from 3.10 to 3.45 eV with increasing oxidation time and temperature.</description><subject>Cathodoluminescence, ionoluminescence</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Other luminescence and radiative recombination</subject><subject>Oxidation</subject><subject>Physics</subject><subject>Surface treatments</subject><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LxDAQhoMouH6cvfbgtTppmjbBkxZdxUUFFb2FbDLVaHa7JF21_nq7VBRPXuaF4Xkm4SVkj8IBBcgOFzHqgyyjlBfQjzUyojyjKZPF4zoZATCaClnwTbIV4wsA5FDCiDxVun1ubOOXMzfHaHBuMInt0jqMSVMn7TOGmfa-S5oPZ90n2sR41G99xmWotRmwpx5xy1kS0ePcWUy87jCs4NDFVvu4QzbqPnD3O7fJ_dnpXXWeTq7HF9XxJDWMC54akU8zDlRqyZkU2VQWmUGwgqKsoZA8l4KXtC7y0koheAZT268ArDUyrwu2TQ6HuyY0MQas1SK4mQ6doqBWPalVT-q3p97YH4yFjkb7Oui5cfFHY7T_F2c9djRg785j999VdXN7e_znkXSwXWzx48fW4VUVJSu5ergaq3NxeXn2UFXqhH0BDkKKvA</recordid><startdate>19960716</startdate><enddate>19960716</enddate><creator>Savchyn, V. 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M.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Physica status solidi. A, Applied research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Savchyn, V. P.</au><au>Stakhira, J. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cathodoluminescence studies of thermally oxidized cleaved surfaces of gallium selenide layered crystals</atitle><jtitle>Physica status solidi. A, Applied research</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>1996-07-16</date><risdate>1996</risdate><volume>156</volume><issue>1</issue><spage>113</spage><epage>118</epage><pages>113-118</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><coden>PSSABA</coden><abstract>Oxide layer formation on cleaved gallium monoselenide layer crystal surfaces during thermal oxidation in air have been studied by the cathodoluminescence (CL) method. GaSe surface heat treatment at temperatures up to 400 °C creates a significant decrease of CL intensity in the free exiton recombination band without any changes in the spectral structure. This is caused by an increase of the nonradiative surface recombination rate. During the thermal oxidation of GaSe cleaved surfaces at 400 °C < T < 600 °C the process of defect creation at the interface to the original structure takes place at first. The defect creation is accompanied by Ga2Se3 phase creation (at T > 450 °C). The main maximum of the CL band of this phase is at 1.45 eV. The β‐Ga2O3 phase creation, which is identified according to its typical CL spectrum, takes place at T ≥ 600 °C. The CL intensity in this spectral part increases sharply and its maximum shifts from 3.10 to 3.45 eV with increasing oxidation time and temperature.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.2211560115</doi><tpages>6</tpages></addata></record> |
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| subjects | Cathodoluminescence, ionoluminescence Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other luminescence and radiative recombination Oxidation Physics Surface treatments |
| title | Cathodoluminescence studies of thermally oxidized cleaved surfaces of gallium selenide layered crystals |
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