Variation in the effective richardson constant of metal-GaAs and Metal-InP contacts due to the effect of processing parameters

The value of experimental Richardson constant (A*) is found to be a function of metal film thickness, type of the metal, method of deposition, and condition of semiconductor prior to metal deposition. In the case of Al and W on GaAs, the value of A* is found higher than the theoretical value. Howeve...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1993-11, Vol.140 (1), p.189-194
1. Verfasser:	Eftekhari, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrical properties of specific thin films Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Metal-nonmetal contacts Physics Surface double layers, schottky barriers, and work functions
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