Modelling the local damage of short-channel MOSFETs due to hot electron injection using results from photoinjection measurements on MOS capacitors

Modelling the local damage of short-channel MOSFETs due to hot electron injection using results from photoinjection measurements on MOS capacitors

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1988-04, Vol.106 (2), p.K215-K220
Hauptverfasser: Januschewski, F., Erzgräber, H. J., Füssel, W.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_issue 2
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container_title Physica status solidi. A, Applied research
container_volume 106
creator Januschewski, F.
Erzgräber, H. J.
Füssel, W.
description
doi_str_mv 10.1002/pssa.2211060261
format Article
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source Wiley Journals
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Modelling the local damage of short-channel MOSFETs due to hot electron injection using results from photoinjection measurements on MOS capacitors
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