Irradiation Induced Defects in III-V Semiconductor Compounds

The present knowledge of the defects introduced by electron irradiation in III–V semiconductor compounds is reviewed. The general trends of intrinsic defect behaviour are illustrated using the case of GaAs, the most extensively studied material. The review ends with comments on the use of positron a...

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1987-08, Vol.102 (2), p.499-510
Hauptverfasser: Bourgoin, J. C., von Bardeleben, H. J., Stievenard, D.
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container_title Physica status solidi. A, Applied research
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creator Bourgoin, J. C.
von Bardeleben, H. J.
Stievenard, D.
description The present knowledge of the defects introduced by electron irradiation in III–V semiconductor compounds is reviewed. The general trends of intrinsic defect behaviour are illustrated using the case of GaAs, the most extensively studied material. The review ends with comments on the use of positron annihilation, its advantages, and limitations for the study of defects in these materials. On fait le point sur la connaissance des défauts introduits par irradiation aux électrons dans les composés semiconducteurs III–V. On illustre les tendances générales du comportement des défauts intrinsèques en prenant le cas du GaAs, le matériau le plus étudié. On finit par des commen‐taires sur l'utilisation de l'annihilation de positrons, ses avantages et limitations pour l'étude des défauts dans ces matériaux.
doi_str_mv 10.1002/pssa.2211020205
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
title Irradiation Induced Defects in III-V Semiconductor Compounds
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