Irradiation Induced Defects in III-V Semiconductor Compounds
The present knowledge of the defects introduced by electron irradiation in III–V semiconductor compounds is reviewed. The general trends of intrinsic defect behaviour are illustrated using the case of GaAs, the most extensively studied material. The review ends with comments on the use of positron a...
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Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1987-08, Vol.102 (2), p.499-510 |
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container_title | Physica status solidi. A, Applied research |
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creator | Bourgoin, J. C. von Bardeleben, H. J. Stievenard, D. |
description | The present knowledge of the defects introduced by electron irradiation in III–V semiconductor compounds is reviewed. The general trends of intrinsic defect behaviour are illustrated using the case of GaAs, the most extensively studied material. The review ends with comments on the use of positron annihilation, its advantages, and limitations for the study of defects in these materials.
On fait le point sur la connaissance des défauts introduits par irradiation aux électrons dans les composés semiconducteurs III–V. On illustre les tendances générales du comportement des défauts intrinsèques en prenant le cas du GaAs, le matériau le plus étudié. On finit par des commen‐taires sur l'utilisation de l'annihilation de positrons, ses avantages et limitations pour l'étude des défauts dans ces matériaux. |
doi_str_mv | 10.1002/pssa.2211020205 |
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On fait le point sur la connaissance des défauts introduits par irradiation aux électrons dans les composés semiconducteurs III–V. On illustre les tendances générales du comportement des défauts intrinsèques en prenant le cas du GaAs, le matériau le plus étudié. On finit par des commen‐taires sur l'utilisation de l'annihilation de positrons, ses avantages et limitations pour l'étude des défauts dans ces matériaux.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Impurity and defect levels</subject><subject>Physics</subject><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNqFj81Lw0AQxRdRsFbPXnPwmnb2K8milxK1Ropa69dt2W42sNomYTdF-9-bEKl4kjkMvHm_NzyETjGMMAAZ196rESEYA2mH76EB5gSHVERv-2gAQHGYiIgfoiPv3wGAQQwDdJE5p3KrGluVQVbmG23y4NIURjc-sK2UZeFLsDBrq6vu2lQuSKt1XW3K3B-jg0KtvDn52UP0fH31lN6Es_tplk5moWYk4iGBotCRJrEgbCkYx5jmGpgSiYkTpjDWhmJDIWaUCJ5oAoIkbAnF0iSat-oQjftc7SrvnSlk7exaua3EILvysisvf8u3xFlP1MprtSqcKrX1OyyOOOZCtLbz3vZpV2b7X6p8WCwmf56EPW19Y752tHIfMoppzOXr3VTO-fwxusVzmdJvU-V42w</recordid><startdate>19870816</startdate><enddate>19870816</enddate><creator>Bourgoin, J. C.</creator><creator>von Bardeleben, H. J.</creator><creator>Stievenard, D.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19870816</creationdate><title>Irradiation Induced Defects in III-V Semiconductor Compounds</title><author>Bourgoin, J. C. ; von Bardeleben, H. J. ; Stievenard, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4265-20ffc6c27924b945113dc04a98e784a11ce31e307432958c209284b0fbe8c5743</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Impurity and defect levels</topic><topic>Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Bourgoin, J. C.</creatorcontrib><creatorcontrib>von Bardeleben, H. J.</creatorcontrib><creatorcontrib>Stievenard, D.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Physica status solidi. A, Applied research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bourgoin, J. C.</au><au>von Bardeleben, H. J.</au><au>Stievenard, D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Irradiation Induced Defects in III-V Semiconductor Compounds</atitle><jtitle>Physica status solidi. A, Applied research</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>1987-08-16</date><risdate>1987</risdate><volume>102</volume><issue>2</issue><spage>499</spage><epage>510</epage><pages>499-510</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><coden>PSSABA</coden><abstract>The present knowledge of the defects introduced by electron irradiation in III–V semiconductor compounds is reviewed. The general trends of intrinsic defect behaviour are illustrated using the case of GaAs, the most extensively studied material. The review ends with comments on the use of positron annihilation, its advantages, and limitations for the study of defects in these materials.
On fait le point sur la connaissance des défauts introduits par irradiation aux électrons dans les composés semiconducteurs III–V. On illustre les tendances générales du comportement des défauts intrinsèques en prenant le cas du GaAs, le matériau le plus étudié. On finit par des commen‐taires sur l'utilisation de l'annihilation de positrons, ses avantages et limitations pour l'étude des défauts dans ces matériaux.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.2211020205</doi><tpages>12</tpages></addata></record> |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics |
title | Irradiation Induced Defects in III-V Semiconductor Compounds |
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