Deep Levels in Si(p) Implanted with C+, N+, O+, and Ne+ Ions Measured by DLTS Method

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1986-03, Vol.94 (1), p.385-389
Hauptverfasser:	Kotliński, J., Mojejko-Kotlińska, K., Subotowicz, M., Beylowska, I.
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Sprache:	ger
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title	Deep Levels in Si(p) Implanted with C+, N+, O+, and Ne+ Ions Measured by DLTS Method
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