Positron Annihilation and Profiles of Radiation Damages in GaAs and Si Crystals Irradiated by Supercurrent Proton or Electron Beams
The methods of positron annihilation, backscattering of channeled ions, and electrical measurements are used to study GaAs and Si crystals after irradiation by supercurrent electron and proton beams. The dependence of positron annihilation parameters and of minority carrier lifetimes on the intensit...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1984-01, Vol.81 (1), p.217-225 |
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| container_end_page | 225 |
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| container_title | Physica status solidi. A, Applied research |
| container_volume | 81 |
| creator | Pogrebnyak, A. D. Boyarko, E. Yu Kryuchkov, Yu. Yu Vorobev, S. A. |
| description | The methods of positron annihilation, backscattering of channeled ions, and electrical measurements are used to study GaAs and Si crystals after irradiation by supercurrent electron and proton beams. The dependence of positron annihilation parameters and of minority carrier lifetimes on the intensity and ddse of the electron and proton irradiation is obtained. Experirncntal results of the defect radiation annealing in crystals are discussed. Profiles of radiation damage in GaAs crystals are obtained using measurements of annihilation photon angular distribution.
[Russian Text Ignored]. |
| doi_str_mv | 10.1002/pssa.2210810123 |
| format | Article |
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A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Positron Annihilation and Profiles of Radiation Damages in GaAs and Si Crystals Irradiated by Supercurrent Proton or Electron Beams</atitle><jtitle>Physica status solidi. A, Applied research</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>1984-01-16</date><risdate>1984</risdate><volume>81</volume><issue>1</issue><spage>217</spage><epage>225</epage><pages>217-225</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><coden>PSSABA</coden><abstract>The methods of positron annihilation, backscattering of channeled ions, and electrical measurements are used to study GaAs and Si crystals after irradiation by supercurrent electron and proton beams. The dependence of positron annihilation parameters and of minority carrier lifetimes on the intensity and ddse of the electron and proton irradiation is obtained. Experirncntal results of the defect radiation annealing in crystals are discussed. Profiles of radiation damage in GaAs crystals are obtained using measurements of annihilation photon angular distribution.
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| ispartof | Physica status solidi. A, Applied research, 1984-01, Vol.81 (1), p.217-225 |
| issn | 0031-8965 1521-396X |
| language | eng |
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| source | Access via Wiley Online Library |
| subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Electrons and positron radiation effects Exact sciences and technology Materials science Metals, semimetals and alloys Metals. Metallurgy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other interactions of matter with particles and radiation Physical radiation effects, radiation damage Physics Specific materials Structure of solids and liquids crystallography |
| title | Positron Annihilation and Profiles of Radiation Damages in GaAs and Si Crystals Irradiated by Supercurrent Proton or Electron Beams |
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