Negative differential resistance in gold-doped high-resistivity silicon
The dependence of the double‐injection threshold voltage on both the concentration of deep‐lying traps and the shallow donor concentration is measured on a series of gold‐doped p+‐i‐n+ Si‐diodes. The compensation of donors in the n‐type silicon after Au‐diffusion is a function of the cooling rate as...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1976-03, Vol.34 (1), p.219-226 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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