High Memory Window, Dual‐Gate Amorphous InGaZnO Thin‐Film Transistor with Ferroelectric Gate Insulator

Ferroelectric (FE) hafnium zirconium oxide (HZO) thin‐film transistors (TFTs) are of increasing interest for next‐generation memory and computing applications. However, these devices face challenges in achieving a substantial memory window (MW). This report presents amorphous InGaZnO (a‐IGZO) ferroe...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2024-11
Hauptverfasser:	Roy, Samiran, Islam, Md Mobaidul, Ali, Arqum, Saha, Jewel Kumer, Lee, Heonbang, Tooshil, Abul, Jang, Jin
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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